On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti: DLC) interlayer

In this present study, the electrical parameters of Al/p-Si (MS) structures with (Ti-doped DLC) interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance-spectroscopy method. The (Ti:DLC) interlayer grown by electrochemical deposition method and its structural characterization was performed by SEM, EDX, and XPS methods. The XPS results show that the chemical-structure of the interlayer has 15.53% Ti, 50.18% O, 18.15% C, 4.14% Si, 10.24% N after annealing. The concentration of acceptor-atoms (NA), Fermi-energy (EF), depletion-layer thickness (Wd), maximum electric-field (Em), and barrier-height (& phi;B(C-V)) values were calculated from the C-2-V plots as 4.78 x 1015cm- 3, 0.20eV, 3.28x10-5cm, 2.40 x 104 V/cm, 0.594eV at 20 kHz and 4.96 x 1015cm- 3, 0.199eV, 4.14x10-5cm, 3.14 x 104 V/cm, 0.849eV at 4 MHz, respectively. The surface-states (Nss) and their life-time (& tau;) were obtained from conductance-method as 0.77 x 1013/(eVcm2) and 1.40x10-3s at 0.05V and 1.57 x 1013/(eVcm2) and 1.74x10-5s at 1.00 V, respectively.