Effect of Vacancy Defect Content on the Interdiffusion of Cubic and Hexagonal SiC/Al Interfaces: A Molecular Dynamics Study

被引:12
作者
Tahani, Masoud [1 ,2 ]
Postek, Eligiusz [2 ]
Motevalizadeh, Leili [3 ]
Sadowski, Tomasz [4 ]
机构
[1] Ferdowsi Univ Mashhad, Dept Mech Engn, Mashhad 9177948974, Iran
[2] Polish Acad Sci, Inst Fundamental Technol Res, Pawinskiego 5B, PL-02106 Warsaw, Poland
[3] Islamic Azad Univ, Dept Phys, Mashhad Branch, Mashhad 9187147578, Iran
[4] Lublin Univ Technol, Dept Solid Mech, PL-20618 Lublin, Poland
来源
MOLECULES | 2023年 / 28卷 / 02期
关键词
interdiffusion; diffusion coefficient; SiC; Al interface; vacancy; molecular dynamics; SILICON-CARBIDE; INTERATOMIC POTENTIALS; IRREVERSIBLE-PROCESSES; MECHANICAL-PROPERTIES; RECIPROCAL RELATIONS; CARBON-VACANCY; DIFFUSION; ALUMINUM; AL; COEFFICIENTS;
D O I
10.3390/molecules28020744
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
The mechanical properties of ceramic-metal nanocomposites are greatly affected by the equivalent properties of the interface of materials. In this study, the effect of vacancy in SiC on the interdiffusion of SiC/Al interfaces is investigated using the molecular dynamics method. The SiC reinforcements exist in the whisker and particulate forms. To this end, cubic and hexagonal SiC lattice polytypes with the Si- and C-terminated interfaces with Al are considered as two samples of metal matrix nanocomposites. The average main and cross-interdiffusion coefficients are determined using a single diffusion couple for each system. The interdiffusion coefficients of the defective SiC/Al are compared with the defect-free SiC/Al system. The effects of temperature, annealing time, and vacancy on the self- and interdiffusion coefficients are investigated. It is found that the interdiffusion of Al in SiC increases with the increase in temperature, annealing time, and vacancy.
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页数:17
相关论文
共 52 条
  • [1] Effect of hot rolling temperature and thermal cycling on creep and damage behavior of powder metallurgy processed Al-SiC particulate composite
    Bhattacharyya, Jishnu J.
    Mitra, R.
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2012, 557 : 92 - 105
  • [2] Boltzmann L., 1894, ANN PHYS, V289, P959, DOI [DOI 10.1002/ANDP.18942891315, 10.1002/andp.18942891315]
  • [3] Concentration dependence of ternary interdiffusion coefficients in Ni3Al/Ni3Al-X couples with X = Cr, Fe, Nb and Ti
    Cermak, J
    Rothova, V
    [J]. ACTA MATERIALIA, 2003, 51 (15) : 4411 - 4421
  • [4] Chang H.C., 1959, P C SILICON CARBIDE, P496
  • [5] Molecular dynamics based cohesive zone law for describing Al-SiC interface mechanics
    Dandekar, Chinmaya R.
    Shin, Yung C.
    [J]. COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING, 2011, 42 (04) : 355 - 363
  • [6] A new analysis for the determination of ternary interdiffusion coefficients from a single diffusion couple
    Dayananda, MA
    Sohn, YH
    [J]. METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1999, 30 (03): : 535 - 543
  • [7] Einstein A, 1906, ANN PHYS-BERLIN, V19, P371
  • [8] Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide
    Erhart, P
    Albe, K
    [J]. PHYSICAL REVIEW B, 2005, 71 (03):
  • [9] PHONON DISPERSION CURVES BY RAMAN SCATTERING IN SIC POLYTYPES 3C,4H,6H,15R,AND 21R
    FELDMAN, DW
    PARKER, JH
    CHOYKE, WJ
    PATRICK, L
    [J]. PHYSICAL REVIEW, 1968, 173 (03): : 787 - &
  • [10] Geng L, 2002, J AM CERAM SOC, V85, P2864, DOI 10.1111/j.1151-2916.2002.tb00546.x