Essential Characteristics of Memristors for Neuromorphic Computing

被引:58
作者
Chen, Wenbin [1 ]
Song, Lekai [2 ]
Wang, Shengbo [1 ]
Zhang, Zhiyuan [1 ]
Wang, Guanyu [1 ]
Hu, Guohua [2 ]
Gao, Shuo [1 ]
机构
[1] Beihang Univ, Sch Instrumentat & Optoelect Engn, Beijing 100191, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
memristors; neural networks; neuromorphic computing; reliability; variability; MAGNETIC TUNNEL-JUNCTIONS; PHASE-CHANGE MEMORY; RESISTIVE SWITCHING BEHAVIOR; ROOM-TEMPERATURE; LARGE MAGNETORESISTANCE; SPIKING NEURONS; NEURAL-NETWORKS; HIGH-SPEED; NONVOLATILE; RESISTANCE;
D O I
10.1002/aelm.202200833
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The memristor is a resistive switch where its resistive state is programable based on the applied voltage or current. Memristive devices are thus capable of storing and computing information simultaneously, breaking the Von Neumann bottleneck. Since the first nanomemristor made by Hewlett-Packard in 2008, advances so far have enabled nanostructured, low-power, high-durability devices that exhibit superior performance over conventional CMOS devices. Herein, the development of memristors based on different physical mechanisms is reviewed. In particular, device stability, integration density, power consumption, switching speed, retention, and endurance of memristors, that are crucial for neuromorphic computing, are discussed in detail. An overview of various neural networks with a focus on building a memristor-based spike neural network neuromorphic computing system is then provided. Finally, the existing issues and challenges in implementing such neuromorphic computing systems are analyzed, and an outlook for brain-like computing is proposed.
引用
收藏
页数:31
相关论文
共 295 条
  • [61] Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes
    Han, XF
    Oogane, M
    Kubota, H
    Ando, Y
    Miyazaki, T
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 283 - 285
  • [62] A double barrier memristive device
    Hansen, M.
    Ziegler, M.
    Kolberg, L.
    Soni, R.
    Dirkmann, S.
    Mussenbrock, T.
    Kohlstedt, H.
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [63] Hasan R, 2015, IEEE INT SYMP NANO, P75, DOI 10.1109/NANOARCH.2015.7180590
  • [64] Ultra-Low Program Current and Multilevel Phase Change Memory for High-Density Storage Achieved by a Low-Current SET Pre-Operation
    He, Mingze
    He, Da
    Qian, Hang
    Lin, Qi
    Wan, Daixing
    Cheng, Xiaomin
    Xu, Ming
    Tong, Hao
    Miao, Xiangshui
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (10) : 1595 - 1598
  • [65] Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions
    He, Weifan
    Sun, Huajun
    Zhou, Yaxiong
    Lu, Ke
    Xue, Kanhao
    Miao, Xiangshui
    [J]. SCIENTIFIC REPORTS, 2017, 7
  • [66] HEBB D. O., 1949
  • [67] LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS
    HICKMOTT, TW
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2669 - &
  • [68] POLARITY-DEPENDENT MEMORY SWITCHING AND BEHAVIOR OF AG DENDRITE IN AG-PHOTODOPED AMORPHOUS AS2S3 FILMS
    HIROSE, Y
    HIROSE, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2767 - 2772
  • [69] Hochreiter S, 1997, NEURAL COMPUT, V9, P1735, DOI [10.1162/neco.1997.9.1.1, 10.1007/978-3-642-24797-2]
  • [70] A QUANTITATIVE DESCRIPTION OF MEMBRANE CURRENT AND ITS APPLICATION TO CONDUCTION AND EXCITATION IN NERVE
    HODGKIN, AL
    HUXLEY, AF
    [J]. JOURNAL OF PHYSIOLOGY-LONDON, 1952, 117 (04): : 500 - 544