Essential Characteristics of Memristors for Neuromorphic Computing

被引:58
作者
Chen, Wenbin [1 ]
Song, Lekai [2 ]
Wang, Shengbo [1 ]
Zhang, Zhiyuan [1 ]
Wang, Guanyu [1 ]
Hu, Guohua [2 ]
Gao, Shuo [1 ]
机构
[1] Beihang Univ, Sch Instrumentat & Optoelect Engn, Beijing 100191, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
memristors; neural networks; neuromorphic computing; reliability; variability; MAGNETIC TUNNEL-JUNCTIONS; PHASE-CHANGE MEMORY; RESISTIVE SWITCHING BEHAVIOR; ROOM-TEMPERATURE; LARGE MAGNETORESISTANCE; SPIKING NEURONS; NEURAL-NETWORKS; HIGH-SPEED; NONVOLATILE; RESISTANCE;
D O I
10.1002/aelm.202200833
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The memristor is a resistive switch where its resistive state is programable based on the applied voltage or current. Memristive devices are thus capable of storing and computing information simultaneously, breaking the Von Neumann bottleneck. Since the first nanomemristor made by Hewlett-Packard in 2008, advances so far have enabled nanostructured, low-power, high-durability devices that exhibit superior performance over conventional CMOS devices. Herein, the development of memristors based on different physical mechanisms is reviewed. In particular, device stability, integration density, power consumption, switching speed, retention, and endurance of memristors, that are crucial for neuromorphic computing, are discussed in detail. An overview of various neural networks with a focus on building a memristor-based spike neural network neuromorphic computing system is then provided. Finally, the existing issues and challenges in implementing such neuromorphic computing systems are analyzed, and an outlook for brain-like computing is proposed.
引用
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页数:31
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共 295 条
  • [191] Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits
    Prezioso, M.
    Mahmoodi, M. R.
    Bayat, F. Merrikh
    Nili, H.
    Kim, H.
    Vincent, A.
    Strukov, D. B.
    [J]. NATURE COMMUNICATIONS, 2018, 9
  • [192] Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
    Prezioso, M.
    Merrikh-Bayat, F.
    Hoskins, B. D.
    Adam, G. C.
    Likharev, K. K.
    Strukov, D. B.
    [J]. NATURE, 2015, 521 (7550) : 61 - 64
  • [193] Quantum confinement in EuO heterostructures
    Prinz, Guenther M.
    Gerber, Timm
    Lorke, Axel
    Mueller, Martina
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (20)
  • [194] Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
    Rao, Feng
    Ding, Keyuan
    Zhou, Yuxing
    Zheng, Yonghui
    Xia, Mengjiao
    Lv, Shilong
    Song, Zhitang
    Feng, Songlin
    Ronneberger, Ider
    Mazzarello, Riccardo
    Zhang, Wei
    Ma, Evan
    [J]. SCIENCE, 2017, 358 (6369) : 1423 - 1426
  • [195] Timing Selector: Using Transient Switching Dynamics to Solve the Sneak Path Issue of Crossbar Arrays
    Rao, Mingyi
    Song, Wenhao
    Kiani, Fatemeh
    Asapu, Shiva
    Zhuo, Ye
    Midya, Rivu
    Upadhyay, Navnidhi
    Wu, Qing
    Barnell, Mark
    Lin, Peng
    Li, Can
    Wang, Zhongrui
    Xia, Qiangfei
    Yang, J. Joshua
    [J]. SMALL SCIENCE, 2022, 2 (01):
  • [196] The impact of thermal boundary resistance in phase-change memory devices
    Reifenberg, John P.
    Kencke, David L.
    Goodson, Kenneth E.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) : 1112 - 1114
  • [197] Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography
    Rishton, SA
    Lu, Y
    Altman, RA
    Marley, AC
    Bian, XP
    Jahnes, C
    Viswanathan, R
    Xiao, G
    Gallagher, WJ
    Parkin, SSP
    [J]. MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) : 249 - 252
  • [198] THE PERCEPTRON - A PROBABILISTIC MODEL FOR INFORMATION-STORAGE AND ORGANIZATION IN THE BRAIN
    ROSENBLATT, F
    [J]. PSYCHOLOGICAL REVIEW, 1958, 65 (06) : 386 - 408
  • [199] Towards spike-based machine intelligence with neuromorphic computing
    Roy, Kaushik
    Jaiswal, Akhilesh
    Panda, Priyadarshini
    [J]. NATURE, 2019, 575 (7784) : 607 - 617
  • [200] Ferroelectric Tunneling Junctions Based on Aluminum Oxide/Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
    Ryu, Hojoon
    Wu, Haonan
    Rao, Fubo
    Zhu, Wenjuan
    [J]. SCIENTIFIC REPORTS, 2019, 9 (1)