Essential Characteristics of Memristors for Neuromorphic Computing

被引:58
作者
Chen, Wenbin [1 ]
Song, Lekai [2 ]
Wang, Shengbo [1 ]
Zhang, Zhiyuan [1 ]
Wang, Guanyu [1 ]
Hu, Guohua [2 ]
Gao, Shuo [1 ]
机构
[1] Beihang Univ, Sch Instrumentat & Optoelect Engn, Beijing 100191, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
memristors; neural networks; neuromorphic computing; reliability; variability; MAGNETIC TUNNEL-JUNCTIONS; PHASE-CHANGE MEMORY; RESISTIVE SWITCHING BEHAVIOR; ROOM-TEMPERATURE; LARGE MAGNETORESISTANCE; SPIKING NEURONS; NEURAL-NETWORKS; HIGH-SPEED; NONVOLATILE; RESISTANCE;
D O I
10.1002/aelm.202200833
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The memristor is a resistive switch where its resistive state is programable based on the applied voltage or current. Memristive devices are thus capable of storing and computing information simultaneously, breaking the Von Neumann bottleneck. Since the first nanomemristor made by Hewlett-Packard in 2008, advances so far have enabled nanostructured, low-power, high-durability devices that exhibit superior performance over conventional CMOS devices. Herein, the development of memristors based on different physical mechanisms is reviewed. In particular, device stability, integration density, power consumption, switching speed, retention, and endurance of memristors, that are crucial for neuromorphic computing, are discussed in detail. An overview of various neural networks with a focus on building a memristor-based spike neural network neuromorphic computing system is then provided. Finally, the existing issues and challenges in implementing such neuromorphic computing systems are analyzed, and an outlook for brain-like computing is proposed.
引用
收藏
页数:31
相关论文
共 295 条
  • [121] Large Memristor Crossbars for Analog Computing
    Li, Can
    Li, Yunning
    Jiang, Hao
    Song, Wenhao
    Lin, Peng
    Wang, Zhongrui
    Yang, J. Joshua
    Xia, Qiangfei
    Hu, Miao
    Montgomery, Eric
    Zhang, Jiaming
    Davila, Noraica
    Graves, Catherine E.
    Li, Zhiyong
    Strachan, John Paul
    Williams, R. Stanley
    Ge, Ning
    Barnell, Mark
    Wu, Qing
    [J]. 2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [122] Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
    Li, Can
    Belkin, Daniel
    Li, Yunning
    Yan, Peng
    Hu, Miao
    Ge, Ning
    Jiang, Hao
    Montgomery, Eric
    Lin, Peng
    Wang, Zhongrui
    Song, Wenhao
    Strachan, John Paul
    Barnell, Mark
    Wu, Qing
    Williams, R. Stanley
    Yang, J. Joshua
    Xia, Qiangfei
    [J]. NATURE COMMUNICATIONS, 2018, 9
  • [123] Ultrahigh Carrier Mobility Achieved in Photoresponsive Hybrid Perovskite Films via Coupling with Single-Walled Carbon Nanotubes
    Li, Feng
    Wang, Hong
    Kufer, Dominik
    Liang, Liangliang
    Yu, Weili
    Alarousu, Erkki
    Ma, Chun
    Li, Yangyang
    Liu, Zhixiong
    Liu, Changxu
    Wei, Nini
    Wang, Fei
    Chen, Lang
    Mohammed, Omar F.
    Fratalocchi, Andrea
    Liu, Xiaogang
    Konstantatos, Gerasimos
    Wu, Tom
    [J]. ADVANCED MATERIALS, 2017, 29 (16)
  • [124] Extremely rich dynamics in a memristor-based chaotic system
    Li, Hongmin
    Yang, Yanfeng
    Li, Wen
    He, Shaobo
    Li, Chunlai
    [J]. EUROPEAN PHYSICAL JOURNAL PLUS, 2020, 135 (07)
  • [125] Li SP, 2018, 2018 INTERNATIONAL CONFERENCE ON CONTROL AND ROBOTS (ICCR), P1, DOI 10.1109/ICCR.2018.8534498
  • [126] Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks
    Li, Yi
    Xu, Lei
    Zhong, Ying-Peng
    Zhou, Ya-Xiong
    Zhong, Shu-Jing
    Hu, Yang-Zhi
    Chua, Leon O.
    Miao, Xiang-Shui
    [J]. ADVANCED ELECTRONIC MATERIALS, 2015, 1 (08):
  • [127] Review of memristor devices in neuromorphic computing: materials sciences and device challenges
    Li, Yibo
    Wang, Zhongrui
    Midya, Rivu
    Xia, Qiangfei
    Yang, J. Joshua
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (50)
  • [128] Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices
    Lim, Jun Yeong
    Yun, Ilgu
    [J]. MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1320 - 1322
  • [129] Three-dimensional memristor circuits as complex neural networks
    Lin, Peng
    Li, Can
    Wang, Zhongrui
    Li, Yunning
    Jiang, Hao
    Song, Wenhao
    Rao, Mingyi
    Zhuo, Ye
    Upadhyay, Navnidhi K.
    Barnell, Mark
    Wu, Qing
    Yang, J. Joshua
    Xia, Qiangfei
    [J]. NATURE ELECTRONICS, 2020, 3 (04) : 225 - 232
  • [130] Giant spin-dependent thermoelectric effect in magnetic tunnel junctions
    Lin, Weiwei
    Hehn, Michel
    Chaput, Laurent
    Negulescu, Beatrice
    Andrieu, Stephane
    Montaigne, Francois
    Mangin, Stephane
    [J]. NATURE COMMUNICATIONS, 2012, 3