Essential Characteristics of Memristors for Neuromorphic Computing

被引:58
作者
Chen, Wenbin [1 ]
Song, Lekai [2 ]
Wang, Shengbo [1 ]
Zhang, Zhiyuan [1 ]
Wang, Guanyu [1 ]
Hu, Guohua [2 ]
Gao, Shuo [1 ]
机构
[1] Beihang Univ, Sch Instrumentat & Optoelect Engn, Beijing 100191, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
memristors; neural networks; neuromorphic computing; reliability; variability; MAGNETIC TUNNEL-JUNCTIONS; PHASE-CHANGE MEMORY; RESISTIVE SWITCHING BEHAVIOR; ROOM-TEMPERATURE; LARGE MAGNETORESISTANCE; SPIKING NEURONS; NEURAL-NETWORKS; HIGH-SPEED; NONVOLATILE; RESISTANCE;
D O I
10.1002/aelm.202200833
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The memristor is a resistive switch where its resistive state is programable based on the applied voltage or current. Memristive devices are thus capable of storing and computing information simultaneously, breaking the Von Neumann bottleneck. Since the first nanomemristor made by Hewlett-Packard in 2008, advances so far have enabled nanostructured, low-power, high-durability devices that exhibit superior performance over conventional CMOS devices. Herein, the development of memristors based on different physical mechanisms is reviewed. In particular, device stability, integration density, power consumption, switching speed, retention, and endurance of memristors, that are crucial for neuromorphic computing, are discussed in detail. An overview of various neural networks with a focus on building a memristor-based spike neural network neuromorphic computing system is then provided. Finally, the existing issues and challenges in implementing such neuromorphic computing systems are analyzed, and an outlook for brain-like computing is proposed.
引用
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页数:31
相关论文
共 295 条
  • [101] Competing memristors for brain-inspired computing
    Kim, Seung Ju
    Kim, Sang Bum
    Jang, Ho Won
    [J]. ISCIENCE, 2021, 24 (01)
  • [102] Active directional switching of surface plasmon polaritons using a phase transition material
    Kim, Sun-Je
    Yun, Hansik
    Park, Kyungsoo
    Hong, Jongwoo
    Yun, Jeong-Geun
    Lee, Kyookeun
    Kim, Joonsoo
    Jeong, Sun Jae
    Mun, Sang-Eun
    Sung, Jangwoon
    Lee, Yong Wook
    Lee, Byoungho
    [J]. SCIENTIFIC REPORTS, 2017, 7
  • [103] Kim W., 2011, 2011 Symposium on VLSI Technology-Digest of Technical Papers, P22
  • [104] Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive layers - art. no. 072909
    Kim, YS
    Jo, JY
    Kim, DJ
    Chang, YJ
    Lee, JH
    Noh, TW
    Song, TK
    Yoon, JG
    Chung, JS
    Baik, SI
    Kim, YW
    Jung, CU
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (07)
  • [105] Theoretical current-voltage characteristics of ferroelectric tunnel junctions
    Kohlstedt, H
    Pertsev, NA
    Contreras, JR
    Waser, R
    [J]. PHYSICAL REVIEW B, 2005, 72 (12)
  • [106] Kohlstedt H., 2001, MRS ONLINE P LIBR, V688
  • [107] Nanoscale memory elements based on solid-state electrolytes
    Kozicki, MN
    Park, M
    Mitkova, M
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (03) : 331 - 338
  • [108] ImageNet Classification with Deep Convolutional Neural Networks
    Krizhevsky, Alex
    Sutskever, Ilya
    Hinton, Geoffrey E.
    [J]. COMMUNICATIONS OF THE ACM, 2017, 60 (06) : 84 - 90
  • [109] Enhanced Magnetoresistance in In-Plane Monolayer MoS2 with CrO2 Electrodes
    Kumar, Abhishek
    Choudhary, Sudhanshu
    [J]. JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2018, 31 (10) : 3245 - 3250
  • [110] Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
    Kumar, Suhas
    Strachan, John Paul
    Williams, R. S. Tanley
    [J]. NATURE, 2017, 548 (7667) : 318 - 321