Paper-Based Lead Sulfide Quantum Dot Heterojunction Photodetectors

Paper-based photodetectors have emerged as reliable candidates for wearable electronics due to their low-cost, degradability and excellent bending properties. However, the application of quantum dots (QDs) to paper-based devices remains a challenge due to the low carrier mobility. In this work, lead sulfide (PbS) QDs are successfully applied to paper-based devices by constructing the amorphous indium gallium zinc oxide (a-IGZO)/PbS QDs-EDT heterojunction to enhance the photoconductive gain of the QDs film. the effect of different paper substrates are investigated on device performance and demonstrate that the heterojunction is not suitable for the fiber-like paper substrate. Heterojunction devices based on Senyan paper and glass paper exhibit stable detection performance with detectivity of 1.71 x 1010 and 3.19 x 1011 Jones, respectively. Benefit from the unique micro-morphology, the Senyan paper-based device exhibited excellent bending resistance and remained stable after 1000 bends. The research team successfully fabricates reliable near-infrared photodetectors based on PbS QDs by constructing the a-IGZO/PbS QDs-EDT heterojunction. The team investigates the effect of different paper substrates on device performance: smooth glass paper devices can achieve high detectivity, while Senyan paper devices with unique morphology can achieve excellent bending resistance.image