Probing switching mechanism of memristor for neuromorphic computing

被引:5
作者
Yang, Zhe [1 ]
Zhang, Zirui [1 ]
Li, Ce [1 ]
Yang, Dongliang [1 ]
Hui, Fei [2 ]
Sun, Linfeng [1 ,3 ]
机构
[1] Beijing Inst Technol, Ctr Quantum Phys, Sch Phys, Key Lab Adv Optoelect Quantum Architecture & Measu, Beijing 100081, Peoples R China
[2] Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450001, Peoples R China
[3] Beijing Inst Technol, Yangtze Delta Reg Acad, Jiaxing 314019, Peoples R China
来源
NANO EXPRESS | 2023年 / 4卷 / 02期
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
neuromorphic computing system; memristor; RS; CAFM; synaptic plasticity; ATOMIC-FORCE MICROSCOPE; 2-DIMENSIONAL MATERIALS; CONDUCTING FILAMENTS; ELECTRONIC SYNAPSES; TRANSITION; MEMORIES; TAOX; DIELECTRICS; BREAKDOWN; TIPS;
D O I
10.1088/2632-959X/acd70c
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In recent, neuromorphic computing has been proposed to simulate the human brain system to overcome bottlenecks of the von Neumann architecture. Memristors, considered emerging memory devices, can be used to simulate synapses and neurons, which are the key components of neuromorphic computing systems. To observe the resistive switching (RS) behavior microscopically and probe the local conductive filaments (CFs) of the memristors, conductive atomic force microscopy (CAFM) with the ultra-high resolution has been investigated, which could be helpful to understand the dynamic processes of synaptic plasticity and the firing of neurons. This review presents the basic working principle of CAFM and discusses the observation methods using CAFM. Based on this, CAFM reveals the internal mechanism of memristors, which is used to observe the switching behavior of memristors. We then summarize the synaptic and neuronal functions assisted by CAFM for neuromorphic computing. Finally, we provide insights into discussing the challenges of CAFM used in the neuromorphic computing system, benefiting the expansion of CAFM in studying neuromorphic computing-based devices.
引用
收藏
页数:16
相关论文
共 145 条
  • [1] Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter
    Aguilera, L.
    Lanza, M.
    Porti, M.
    Grifoll, J.
    Nafria, M.
    Aymerich, X.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2008, 79 (07)
  • [2] Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability
    Aguilera, L.
    Lanza, M.
    Bayerl, A.
    Porti, M.
    Nafria, M.
    Aymerich, X.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 360 - 363
  • [3] Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM
    Arita, Masashi
    Takahashi, Akihito
    Ohno, Yuuki
    Nakane, Akitoshi
    Tsurumaki-Fukuchi, Atsushi
    Takahashi, Yasuo
    [J]. SCIENTIFIC REPORTS, 2015, 5
  • [4] Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
    Arnold, Andrew J.
    Razavieh, Ali
    Nasr, Joseph R.
    Schulman, Daniel S.
    Eichfeld, Chad M.
    Das, Saptarshi
    [J]. ACS NANO, 2017, 11 (03) : 3110 - 3118
  • [5] Dual-Gated MoS2 Neuristor for Neuromorphic Computing
    Bao, Lin
    Zhu, Jiadi
    Yu, Zhizhen
    Jia, Rundong
    Cai, Qifeng
    Wang, Zongwei
    Xu, Liying
    Wu, Yanqing
    Yang, Yuchao
    Cai, Yimao
    Huang, Ru
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (44) : 41482 - 41489
  • [6] Bayer A., 2013, 2013 IEEE INT REL PH
  • [7] Metal oxide resistive memory switching mechanism based on conductive filament properties
    Bersuker, G.
    Gilmer, D. C.
    Veksler, D.
    Kirsch, P.
    Vandelli, L.
    Padovani, A.
    Larcher, L.
    McKenna, K.
    Shluger, A.
    Iglesias, V.
    Porti, M.
    Nafria, M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
  • [8] Enhanced electrical performance for conductive atomic force microscopy
    Blasco, X
    Nafria, M
    Aymerich, X
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (01)
  • [9] Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
    Celano, Umberto
    Goux, Ludovic
    Degraeve, Robin
    Fantini, Andrea
    Richard, Olivier
    Bender, Hugo
    Jurczak, Malgorzata
    Vandervorst, Wilfried
    [J]. NANO LETTERS, 2015, 15 (12) : 7970 - 7975
  • [10] Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices
    Celano, Umberto
    Goux, Ludovic
    Belmonte, Attilio
    Opsomer, Karl
    Degraeve, Robin
    Detavernier, Christophe
    Jurczak, Malgorzata
    Vandervorst, Wilfried
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2015, 6 (10): : 1919 - 1924