Love Waves in a Piezoelectric Semiconductor Thin Film on an Elastic Dielectric Half-Space

被引：13

作者：

Tian, Ru ^{[1
,2
]}

Nie, Guoquan ^{[1
,3
]}

Liu, Jinxi ^{[1
]}

Pan, Ernian ^{[4
,5
]}

Wang, Yuesheng ^{[6
]}

机构：

[1] Shijiazhuang Tiedao Univ, State Key Lab Mech Behav & Syst Safety Traff Engn, Shijiazhuang 050043, Hebei, Peoples R China

[2] Shijiazhuang Tiedao Univ, Dept Math & Phys, Shijiazhuang 050043, Hebei, Peoples R China

[3] Shijiazhuang Tiedao Univ, Sch Mech Engn, Shijiazhuang 050043, Hebei, Peoples R China

[4] Natl Yang Ming Chiao Tung Univ, Coll Engn, Taipei, Taiwan

[5] Natl Yang Ming Chiao Tung Univ, Inst Pioneer Semicond Innovat, Taipei, Taiwan

[6] Beijing Jiaotong Univ, Dept Mech, Beijing 100044, Peoples R China

来源：

ACTA MECHANICA SOLIDA SINICA | 2023年 / 36卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Love wave; Piezoelectric semiconductor; Layered structure; Dispersion; Attenuation; ACOUSTIC-WAVES; SURFACE-WAVES; AMPLIFICATION; ZNO; PROPAGATION; DISPERSION; DIAMOND; GROWTH; FILTER;

D O I：

10.1007/s10338-022-00364-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, Love waves propagating in a piezoelectric semiconductor (PSC) layered structure are investigated, where a PSC thin film is perfectly bonded on an elastic dielectric half-space. The dispersion equations are derived analytically. The influence of semiconducting properties on the propagation characteristics is examined in detail. Numerical results show that the semiconducting effect reduces the propagation speed, and that the Love waves can propagate with a speed slightly higher than the shear wave speed of the elastic dielectric half-space. The wave speed and attenuation significantly depend on the steady-state carrier density and the thickness of the PSC thin film. It is also found that when the horizontal biasing electric field is larger than the critical value (corresponding to the zero attenuation), the wave amplitude is increased. These findings are useful for the analysis and design of various surface wave devices made of PSC.

引用

页码：45 / 54

页数：10

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