Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

被引：7

作者：

Lin, Ya-Xun ^{[1
,2
]}

Chao, Der-Sheng ^{[3
]}

Liang, Jenq-Horng ^{[1
,4
]}

Shen, Yao-Luen ^{[5
]}

Huang, Chih-Fang ^{[5
]}

Hall, Steve ^{[2
]}

Mitrovic, Ivona Z. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300044, Taiwan

[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, England

[3] Natl Tsing Hua Univ, Nucl Sci & Technol Dev Ctr, Hsinchu 300044, Taiwan

[4] Natl Tsing Hua Univ, Inst Nucl Engn & Sci, Hsinchu 300044, Taiwan

[5] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300044, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2023年 / 207卷

基金：

英国工程与自然科学研究理事会;

关键词：

Gallium nitride; Schottky barrier diode; Variable range hopping; Dislocation; LEAKAGE;

D O I：

10.1016/j.sse.2023.108723

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quasi-vertical Schottky Barrier Diodes (SBDs) with near to ideal turn-on voltage and ideality factor (n) of 1.02, were fabricated on a GaN on Si substrate. The average turn-on voltage and on-resistance values were found to be 0.23 & PLUSMN; 0.005 V (at 1 A/cm2) and 1.76 & PLUSMN; 0.11 m & omega;cm2, respectively with diode series resistance of 11 & OHM;. The analysis of the current-voltage curve revealed a temperature-independent barrier height, however the capacitance-voltage method showed a negative temperature coefficient. This discrepancy is discussed in the paper. Variable range hopping through dislocations is shown to be the dominant reverse current leakage mechanisms identified in the fabricated diode, with a characteristic temperature, T0 of 2 x 1010 K.

引用

页数：6

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