Ferroelectric polarization-switching acceleration of sputtered Hf0.5Zr0.5O2 with defect-induced polarization of interlayer

被引：5

作者：

Han, Changhyeon ^{[1
]}

Yim, Jiyong ^{[1
]}

Nguyen, An ^{[3
,4
]}

Kim, Jeonghan ^{[1
]}

Kwon, Ki Ryun ^{[1
]}

Kim, Sangwoo ^{[1
]}

Jeong, Soi ^{[2
,3
]}

Park, Eun Chan ^{[2
,3
]}

You, Ji Won ^{[2
,3
]}

Choi, Rino ^{[3
,4
]}

Kwon, Daewoong ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect Engn, Seoul, South Korea

[2] Inha Univ, Dept Elect Engn, Incheon, South Korea

[3] Inha Univ, 3D Convergence Ctr, Incheon, South Korea

[4] Inha Univ, Dept Mat Sci & Engn, Incheon, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 960卷

基金：

新加坡国家研究基金会;

关键词：

Hf0; 5Zr0; Sputtered HZO; TiOx interlayer; Polarization coupling; FeTFT; THIN-FILMS; TRANSPARENT;

D O I：

10.1016/j.jallcom.2023.170516

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Herein, ferroelectric properties of Hf0.5Zr0.5O2 (HZO) are analyzed by inserting various interlayers (ILs) underneath HZO in capacitors and ferroelectric thin-film-transistors (FeTFTs) with all-sputter-deposited metal/HZO/IL/Si (MFIS) stacks. Although all the HZO films have similar phase ratios regardless of the IL, only the MFIS stack with a TiOx IL exhibit polarization switching. To investigate the polarization due to the introduction of TiOx, the polarization of TiOx is checked. It is confirmed that the TiOx can be polarized by the movement of oxygen vacancies (OVs) depending on the electric-field direction, which accelerates the po-larization switching of HZO. Therefore, the insertion of the TiOx IL results in a wide (3.4-V) memory window in the FeTFTs, since the IL suppress the leakage current by increasing the IL thickness and simultaneously accelerates the polarization switching of the HZO.(c) 2023 Elsevier B.V. All rights reserved.

引用

页数：7

共 35 条

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