Lead selenide microcrystals fabricated by the pulsed laser welding technique employed as 6G technology microwave resonators and as MOS capacitors

被引：10

作者：

Alkhamisi, Manal M. ^{[1
]}

Khanfar, Hazem K. ^{[2
]}

Qasrawi, A. F. ^{[3
,4
]}

机构：

[1] King Abdulaziz Univ, Coll Sci & Art, Dept Phys, Rabigh, Saudi Arabia

[2] Arab Amer Univ, Dept Telecommun Engn, Jenin 240, Palestine

[3] Arab Amer Univ, Dept Phys, Jenin, Palestine

[4] Istinye Univ, Dept Elect & Elect Engn, TR-34010 Istanbul, Turkiye

来源：

PHYSICA B-CONDENSED MATTER | 2023年 / 649卷

关键词：

PbSe; Pulsed laser welding; MOS; Microwave; 6G technology; PBSE; PERFORMANCE;

D O I：

10.1016/j.physb.2022.414512

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

PbSe microcrystals are fabricated by the pulsed laser welding technique in Ar atmosphere within 2 min. The microcrystals showed cubic structural phases of PbSe in addition to tetragonal SeO2. PbSe microcrystals exhibited layered structure composed of 200 nm thick layers. Electrical characterization on these crystals (Ag/ PbSe/Ag) revealed tunneling type current-voltage characteristics. Large resistive response to an imposed ac signal in the microwave frequency domain has been shown. In addition, the cutoff frequency (fco) spectra dis-played fco value larger than 100 GHz nominating the devices for 6G technology applications. Moreover, in-vestigations on the current conduction mechanism have shown the preferred current conduction by quantum mechanical tunneling accompanied with correlated barrier hopping. On the other hand, measurements of the capacitance-voltage characteristics in the frequency domain of 1.0-100 MHz showed performance of the Ag/ PbSe/Ag structures as a metal -oxide-semiconductors (MOS) devices suitable for energy storage at ultrashort times.

引用

页数：7

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