Boosting efficiency above 28% using effective charge transport layer with Sr3SbI3 based novel inorganic perovskite

被引:73
作者
Reza, Md. Shamim [1 ]
Rahman, Md. Ferdous [1 ]
Kuddus, Abdul [2 ]
Mohammed, Mustafa K. A. [3 ]
Al-Mousoi, Ali K. [4 ]
Islam, Md. Rasidul [5 ]
Ghosh, Avijit [1 ]
Bhattarai, Sagar [6 ]
Pandey, Rahul [7 ]
Madan, Jaya [7 ]
Hossain, M. Khalid [8 ]
机构
[1] Begum Rokeya Univ, Dept Elect & Elect Engn, Adv Energy Mat & Solar Cell Res Lab, Rangpur 5400, Bangladesh
[2] Ritsumeikan Univ, Ritsumeikan Global Innovat Res Org, Kusatsu, Shiga 5258577, Japan
[3] Univ Warith Al Anbiyaa, Coll Engn, Karbala 56001, Iraq
[4] Al Iraqia Univ, Coll Engn, Elect Engn Dept, Baghdad 10011, Iraq
[5] Bangamata Sheikh Fojilatunnesa Mujib Sci & Technol, Dept Elect & Elect Engn, Jamalpur 2012, Bangladesh
[6] Indian Inst Technol Guwahati, Technol Innovat & Dev Fdn, Gauhati 781039, Assam, India
[7] Chitkara Univ, Chitkara Univ Inst Engn & Technol, VLSI Ctr Excellence, Rajpura 140401, Punjab, India
[8] Bangladesh Atom Energy Commiss, Atom Energy Res Estab, Inst Elect, Dhaka 1349, Bangladesh
关键词
SOLAR-CELLS; DOPING DENSITY; BAND-GAP; PERFORMANCE; DESIGN; HETEROJUNCTION; THICKNESS; ABSORBER;
D O I
10.1039/d3ra06137j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Strontium antimony iodide (Sr3SbI3) is one of the emerging absorbers materials owing to its intriguing structural, electronic, and optical properties for efficient and cost-effective solar cell applications. A comprehensive investigation on the structural, optical, and electronic characterization of Sr3SbI3 and its subsequent applications in heterostructure solar cells have been studied theoretically. Initially, the optoelectronic parameters of the novel Sr3SbI3 absorber, and the possible electron transport layer (ETL) of tin sulfide (SnS2), zinc sulfide (ZnS), and indium sulfide (In2S3) including various interface layers were obtained by DFT study. Afterward, the photovoltaic (PV) performance of Sr3SbI3 absorber-based cell structures with SnS2, ZnS, and In2S3 as ETLs were systematically investigated at varying layer thickness, defect density bulk, doping density, interface density of active materials including working temperature, and thereby, optimized PV parameters were achieved using SCAPS-1D simulator. Additionally, the quantum efficiency (QE), current density-voltage (J-V), and generation and recombination rates of photocarriers were determined. The maximum power conversion efficiency (PCE) of 28.05% with J(SC) of 34.67 mA cm(-2), FF of 87.31%, V-OC of 0.93 V for SnS2 ETL was obtained with Al/FTO/SnS2/Sr3SbI3/Ni structure, while the PCE of 24.33%, and 18.40% in ZnS and In2S3 ETLs heterostructures, respectively. The findings of this study contribute to in-depth understanding of the physical, electronic, and optical properties of Sr3SbI3 absorber perovskite and SnS2, ZnS, and In2S3 ETLs. Additionally, it provides valuable insights into the potential of Sr3SbI3 in heterostructure perovskite solar cells (PSCs), paving the pathway for further experimental design of an efficient and stable PSC devices.
引用
收藏
页码:31330 / 31345
页数:16
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