Study on growth factors of SiC whisker in situ in SiCW/SiC composites based on selective laser sintering technology

In this study, SiCW/SiC composite material was prepared through selective laser sintering (SLS), the effect of material parameters (pretreatment of PCS, content of PCS, type of catalyst and content of catalyst) on the growth number of SiC whisker was investigated. The results indicate that when the temperature variable of PCS pre-treatment was 260 degrees C or 300 degrees C, the number of in situ generated SiC whisker was noticeably higher than that pretreated at 140/180/200/240 degrees C. The catalytic effect of ferrocene was superior than pure Fe, alpha-Al2O3 and Fe (NO3)3. Under this experimental condition, the best parameter was 10 wt.% of PCS and 4 wt.% of ferrocene. This find not only provides a research basis for the preparation of SiCW/SiC composites prepared by SLS technology, but also perfects basic datas for the preparation process of SiCW/SiC composites.