Can Interface Layer be Really Free for HfxZr1-xO2 Based Ferroelectric Field-Effect Transistors With Oxide Semiconductor Channel?

被引：11

作者：

Cui, Tianning ^{[1
]}

Chen, Danyang ^{[1
]}

Dong, Yulong ^{[1
]}

Fan, Yuyan ^{[1
]}

Yao, Zikang ^{[1
]}

Duan, Hongxiao ^{[1
]}

Liu, Jingquan ^{[2
]}

Liu, Gang ^{[2
]}

Si, Mengwei ^{[2
]}

Li, Xiuyan ^{[2
]}

机构：

[1] Shanghai Jiao Tong Univ, Natl Key Lab Micro Nano Fabricat Technol, Shanghai 200240, Peoples R China

[2] Shanghai Jiao Tong Univ, Natl Key Lab Micro & Nano Fabricat Technol, Shanghai 200240, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 03期

关键词：

Ferroelectric/antiferroelectric HZO; interfacial layer; memory window; MEMORY CHARACTERISTICS; FET;

D O I：

10.1109/LED.2024.3355523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The HfxZr1-xO2 (HZO) based ferroelectric field-effect transistors (FeFETs) with oxide semiconductor channel have been proposed to have the potential of interface layer (IL) free, but the FeFET properties with real IL-free structure has rarely been demonstrated. In this work, we experimentally and theoretically clarified that real IL-free FeFET with ferroelectric (FE) HZO as gate oxide is difficult to get memory window (MW) because the polarization switching is difficult to occur due to insufficient positive charge compensation from oxide channel. In addition, we demonstrate that IL-free FeFETs with antiferroelectric (AFE) HZO provides a solution to get MW through positive subloop which does not require positive charge compensation in polarization changing. And an endurance performance up to 10(9) cycles is achieved in this FeFET structure. Our results provide new insights into engineering of HZO-based FeFET with oxide channel.

引用

页码：368 / 371

页数：4

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