Spintronic Logic Circuit Developments Based on the Magnetic Domain Wall Majority Gates

被引:0
|
作者
Kim, June-Seo [1 ]
Cho, Jaehun [1 ]
机构
[1] DGIST, Inst Convergence, Div Nanotechnol, Daegu 42988, South Korea
来源
关键词
majority gates; magnetic domain wall motion; perpendicular magnetic anisotropy; interlayer exchange coupling; DRIVEN;
D O I
10.4283/JKMS.2023.33.5.184
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spintronic majority gate based on the current-induced magnetic domain wall motion is introduced. The spin majority gate is consisting of three individual domain wall input terminals and one output terminal after the logic operation. This simple structure can realize AND gate and OR gate. To realize NOT gate operation based on the magnetic domain wall motion a magnetic domain wall inverter, which can reverse the input domains is introduced as well. The physical origin of the magnetic domain wall inverter is socalled "the interlayer exchange coupling" or "Ruderman-Kittel-Kasuya-Yosida interaction". Finally, the fabrication processes with several critical issues for the spintronic majority gates including the domain wall inverter are extensively discussed.
引用
收藏
页码:184 / 189
页数:6
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