A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT

被引：1

作者：

Li, Jiaxuan ^{[1
,2
]}

Yuan, Yang ^{[1
,2
]}

Yuan, Bin ^{[1
,2
]}

Fan, Jingxin ^{[1
,2
]}

Zeng, Jialong ^{[1
,2
]}

Yu, Zhongjun ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Aerosp Informat Res Inst, Beijing 100094, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 101408, Peoples R China

来源：

MICROMACHINES | 2023年 / 14卷 / 06期

关键词：

gallium arsenide (GaAs); Ku-band; microwave monolithic integrated circuit (MMIC); broadband power amplifier; stacked FET; DESIGN;

D O I：

10.3390/mi14061276

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 & mu;m gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. In this design, the advantages of the stacked FET structure in the broadband PA design are illustrated by theoretical derivation. The proposed PA uses a two-stage amplifier structure and a two-way power synthesis structure to achieve high-power gain and high-power design, respectively. The fabricated power amplifier was tested under continuous wave conditions, and the test results showed a peak power of 30.8 dBm at 16 GHz. At 15 to 17.5 GHz, the output power was above 30 dBm with a PAE of more than 32%. The fractional bandwidth of the 3 dB output power was 30%. The chip area was 3.3 x 1.2 mm(2) and included input and output test pads.

引用

页数：10

共 26 条

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