Bandlike Transport and Charge-Carrier Dynamics in BiOI Films

被引:9
作者
Lal, Snigdha [1 ]
Righetto, Marcello [1 ]
Ulatowski, Aleksander M. [1 ]
Motti, Silvia G. [1 ,2 ]
Sun, Zhuotong [3 ]
MacManus-Driscoll, Judith L. [3 ]
Hoye, Robert L. Z. [4 ]
Herz, Laura M. [1 ,5 ]
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Univ Southampton, Fac Engn & Phys Sci, Sch Phys & Astron, Southampton SO17 1BJ, England
[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England
[4] Univ Oxford, Dept Chem, Inorgan Chem Lab, Oxford OX1 3QR, England
[5] Tech Univ Munich, Inst Adv Study, D-85748 Garching, Germany
基金
英国工程与自然科学研究理事会;
关键词
HALIDE PEROVSKITES; BISMUTH OXYHALIDES; SOLAR-CELLS; SEMICONDUCTORS; RECOMBINATION; LOCALIZATION; OXYIODIDE; ELECTRON; MOBILITY; CAPTURE;
D O I
10.1021/acs.jpclett.3c01520
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Following the emergence of lead halide perovskites (LHPs)as materialsfor efficient solar cells, research has progressed to explore stable,abundant, and nontoxic alternatives. However, the performance of suchlead-free perovskite-inspired materials (PIMs) still lags significantlybehind that of their LHP counterparts. For bismuth-based PIMs, onesignificant reason is a frequently observed ultrafast charge-carrierlocalization (or self-trapping), which imposes a fundamental limiton long-range mobility. Here we report the terahertz (THz) photoconductivitydynamics in thin films of BiOI and demonstrate a lack of such self-trapping,with good charge-carrier mobility, reaching & SIM;3 cm(2) V-1 s(-1) at 295 K and increasinggradually to & SIM;13 cm(2) V-1 s(-1) at 5 K, indicative of prevailing bandlike transport.Using a combination of transient photoluminescence and THz- and microwave-conductivityspectroscopy, we further investigate charge-carrier recombinationprocesses, revealing charge-specific trapping of electrons at defectsin BiOI over nanoseconds and low bimolecular band-to-band recombination.Subject to the development of passivation protocols, BiOI thus emergesas a superior light-harvesting semiconductor among the family of bismuth-basedsemiconductors.
引用
收藏
页码:6620 / 6629
页数:10
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