Superior high temperature performance of 8 kV NiO/Ga2O3 vertical heterojunction rectifiers

被引:27
作者
Li, Jian-Sian [1 ]
Chiang, Chao-Ching [1 ]
Xia, Xinyi [1 ]
Wan, Hsiao-Hsuan [1 ]
Ren, Fan [1 ]
Pearton, S. J. [1 ,2 ]
机构
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32606 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32606 USA
关键词
Compendex;
D O I
10.1039/d3tc01200j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
NiO/beta-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages (V-B) of >8 kV to 600 K. For 100 mu m diameter devices, the power figure of merit (V-B)(2)/R-ON, where R-ON is the on-state resistance, was 9.1 GW cm(-2) at 300 K and 3.9 GW cm(-2) at 600 K. By sharp contrast, Schottky rectifiers fabricated on the same wafers show V-B of similar to 1100 V at 300 K, with a negative temperature coefficient of breakdown of 2 V K-1. The corresponding figures of merit for Schottky rectifiers were 0.22 GW cm(-2) at 300 K and 0.59 MW cm(-2) at 600 K. The on-off ratio remained >10(10) up to 600 K for heterojunction rectifiers but was 3 orders of magnitude lower over the entire temperature range for Schottky rectifiers. The power figure of merit is higher by a factor of approximately 6 than the 1-D unipolar limit of SiC. The reverse recovery times were similar to 26 +/- 2 ns for both types of devices and were independent of temperature. We also fabricated large area, 1 mm(2) rectifiers. These exhibited V-B of 4 kV at 300 K and 3.6 kV at 600 K. The results show the promise of using this transparent oxide heterojunction for high temperature, high voltage applications.
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页码:7750 / 7757
页数:8
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