The effect of magnetic order on the thermal transport properties of the intrinsic two-dimensional magnet 2H-VSe2

被引:4
|
作者
Chen, Qiao [1 ]
Wang, Nai-ye [1 ]
Shen, Kai-wen [1 ,2 ]
Sun, Jing [3 ]
机构
[1] Hunan Inst Engn, Sch Comp Sci & Elect, Xiangtan 411104, Peoples R China
[2] Jishou Univ, Coll Phys & Mech & Elect Engn, Jishou 416000, Peoples R China
[3] Hunan Inst Engn, Sch Elect & Informat Engn, Xiangtan 411104, Peoples R China
关键词
FERROMAGNETISM;
D O I
10.1039/d3cp00008g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By using first-principles calculations combined with the phonon Boltzmann transport equation, in this work, we systematically investigate the effect of magnetic order on the phonon and thermal transport properties of the intrinsic two dimensional magnet 2H-VSe2. The results show that 2H-VSe2 is dynamically stable in both paramagnetic and ferromagnetic phases, and the obvious discrepancy of characteristic frequencies of Raman-active phonon modes provides a reliable way to identify the magnetic phase. Meanwhile, our calculations also indicate that the magnetic order has a vital effect on the thermal transport properties. Around the Curie temperature (500 K), the thermal conductivity of 2H-VSe2 in the FM phase (16.3 W mK(-1)) is about four times larger than that in the PM phase (4.3 W mK(-1)), and such a difference could be maintained even when considering the temperature dependent force constants. By analyzing the phonon mode information and root mean square displacement, we reveal that large atomic interactions and suppressed phonon anharmonicity are the main roots for the enhanced thermal conductivity in the FM phase 2H-VSe2. These results further demonstrate that magnetic materials with a FM phase always host more excellent thermal transport properties than those with a PM phase, and shed light on the great potential applications of thermal switching devices based on 2H-VSe2.
引用
收藏
页码:9817 / 9823
页数:7
相关论文
共 50 条
  • [41] Transport properties of two-dimensional electrons in periodically modulated magnetic fields
    Yoshida, J
    Ohtsuki, T
    Noda, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 18 (1-3): : 153 - 154
  • [42] Transport properties of two-dimensional electrons through multiple magnetic barriers
    Zhang, X.W. (hedge80@sina.com.cn), 1600, American Institute of Physics Inc. (114):
  • [43] On the role of disorder in transport and magnetic properties of the two-dimensional electron gas
    Gold, A
    Dolgopolov, VT
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (29) : 7091 - 7096
  • [44] INFLUENCE OF MAGNETIC FIELDS ON THE INTRINSIC SPIN HALL EFFECT IN TWO-DIMENSIONAL SYSTEMS
    Raichev, O. E.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2009, 23 (12-13): : 2566 - 2572
  • [45] Transport properties of a two-dimensional electron liquid at high magnetic fields
    D'Agosta, R
    Raimondi, R
    Vignale, G
    PHYSICAL REVIEW B, 2003, 68 (03)
  • [46] Intrinsic mechanism of anomalous Hall effect in a two-dimensional magnetic system with impurities
    Dugaev, VK
    Bruno, P
    Taillefumier, M
    Canals, B
    Lacroix, C
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO1, 2006, 3 (01): : 44 - 47
  • [47] Intrinsic two-dimensional multiferroicity in CrNCl2 monolayer
    沈威
    潘远辉
    申胜男
    李辉
    聂思媛
    梅杰
    Chinese Physics B, 2021, (11) : 523 - 527
  • [48] Intrinsic two-dimensional multiferroicity in CrNCl2 monolayer*
    Shen, Wei
    Pan, Yuanhui
    Shen, Shengnan
    Li, Hui
    Nie, Siyuan
    Mei, Jie
    CHINESE PHYSICS B, 2021, 30 (11)
  • [49] Intrinsic edge excitons in two-dimensional MoS2
    D'Amico, Pino
    Gibertini, Marco
    Prezzi, Deborah
    Varsano, Daniele
    Ferretti, Andrea
    Marzari, Nicola
    Molinari, Elisa
    PHYSICAL REVIEW B, 2020, 101 (16)
  • [50] Effect of Twist Angle on Interfacial Thermal Transport in Two-Dimensional Bilayers
    Zhang, Lenan
    Zhong, Yang
    Li, Xiangyu
    Park, Ji-Hoon
    Song, Qichen
    Li, Long
    Guo, Liang
    Kong, Jing
    Chen, Gang
    NANO LETTERS, 2023, 23 (17) : 7790 - 7796