Power-Law Scaling of Relaxation Time Fluctuations in Transmon Qubits

被引:1
作者
Li, Kungang [1 ]
Dutta, S. K. [1 ]
Steffen, Zach [1 ,2 ]
Palmer, B. S. [1 ,2 ]
Lobb, C. J. [1 ]
Wellstood, F. C. [1 ]
机构
[1] Univ Maryland, College Pk, MD 20742 USA
[2] Lab Phys Sci, College Pk, MD 20740 USA
关键词
Non-equilibrium quasiparticles; quantum computing; superconducting qubits; transmon;
D O I
10.1109/TASC.2023.3243198
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have measured temporal fluctuations in the energy relaxation time T-1 of a series of 3D transmon qubits. At 20 mK, the relaxation times of the devices have average values between 2 and 190 mu s, with standard deviations as large as 20% of the averages. Over the different devices, this fluctuation magnitude roughly scales as a power law in the average T-1, with an exponent near 1.5. With increasing temperature, T-1 decreases due to a higher density of thermally-generated quasiparticles. For an individual device measured up to 250 mK, the fluctuation magnitude appears to be proportional to T-1. We present a model of quasiparticle dissipation channels that reproduces both of the observed scaling relationships.
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页数:5
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  • [21] Measurements of Quasiparticle Tunneling Dynamics in a Band-Gap-Engineered Transmon Qubit
    Sun, L.
    DiCarlo, L.
    Reed, M. D.
    Catelani, G.
    Bishop, Lev S.
    Schuster, D. I.
    Johnson, B. R.
    Yang, Ge A.
    Frunzio, L.
    Glazman, L.
    Devoret, M. H.
    Schoelkopf, R. J.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 108 (23)
  • [22] Impact of ionizing radiation on superconducting qubit coherence
    Vepsalainen, Antti P.
    Karamlou, Amir H.
    Orrell, John L.
    Dogra, Akshunna S.
    Loer, Ben
    Vasconcelos, Francisca
    Kim, David K.
    Melville, Alexander J.
    Niedzielski, Bethany M.
    Yoder, Jonilyn L.
    Gustavsson, Simon
    Formaggio, Joseph A.
    VanDevender, Brent A.
    Oliver, William D.
    [J]. NATURE, 2020, 584 (7822) : 551 - +
  • [23] Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness
    Yamamoto, T.
    Nakamura, Y.
    Pashkin, Yu. A.
    Astafiev, O.
    Tsai, J. S.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (21)