Anti-ablation performance of plasma sprayed ZrB2/SiC coatings on C/C substrates and the influence of a chemical vapor deposited SiC interlayer

被引:5
作者
Gao, Zhi-ting [1 ,2 ]
Ma, Zhuang [1 ,2 ]
Liu, Qiang [3 ]
Zhang, Ze [1 ]
Wang, Yi-fan [1 ]
Liu, Shao-pu [1 ]
Liu, Ling [1 ,2 ]
Liu, Yan-bo [1 ,2 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[2] Beijing Inst Technol Chongqing Innovat Ctr, Chongqing 401120, Peoples R China
[3] Northeastern Univ, Sch Mat, Shenyang 110819, Peoples R China
基金
中国国家自然科学基金;
关键词
CVD-SiC interlayer; Plasma spraying; Ablation resistance; C; C substrate; OXIDATION BEHAVIORS; SILICON-CARBIDE; WATER-VAPOR; COMPOSITES; GROWTH; CERAMICS; LAYERS; CVD;
D O I
10.1016/j.mtcomm.2023.106591
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To address the industrial usage of carbon/carbon (C/C) substrates with plasma-sprayed ZrB2/SiC coatings, a continuous and dense chemical vapor deposition (CVD)-SiC interlayer of 150 & mu;m was deposited on a C/C sub-strate. The integration of CVD-SiC with the C/C substrate and plasma sprayed (PS) ZrB2/SiC coatings results in a tight interface. The SiC interlayer significantly reducing thermal stress in the optimized composites up to 1828 Mpa, a decrease of approximately 60% compared to standard composites without CVD-SiC. Ablation tests con-ducted showed that the optimized composite displayed remarkable mass ablation rate of -11.7% after ablation for 600 s, with a notable increase of -3.5% even after ablation for 1800 s. After 600 s of ablation, the exposed SiO2 layer is approximately 500 & mu;m in size. After 900 s of ablation, the exposed SiO2 layer is approximately 1500 & mu;m. After 1800 s of ablation, the SiO2 is completely evaporated, exposing the C/C matrix, at which point the coating has failed. The SiC interlayer improve the ablation resistance due to the continuous SiO2 film formed by the self-sealing and O anti-diffusive properties.
引用
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页数:10
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