Diffused Oxygen as Dominating Shallow Acceptor in p-Type Copper Iodide Thin Films

被引：0

作者：

Lorenz, Michael ^{[1
]}

Storm, Philipp ^{[1
]}

Gierth, Stephan ^{[2
]}

Selle, Susanne ^{[2
]}

von Wenckstern, Holger ^{[1
]}

Grundmann, Marius

机构：

[1] Univ Leipzig, Felix Bloch Inst Festkorperphys, Linnestr 5, D-04103 Leipzig, Germany

[2] Fraunhofer Inst Mikrostrukt Mat & Syst IMWS, Walter Hulse Str 1, D-06120 Halle, Germany

来源：

CHEMIE INGENIEUR TECHNIK | 2023年 / 95卷 / 11期

关键词：

Copper iodide; Diffusion; p-type semiconductor; Pulsed laser deposition; Thin films; HIGHLY-TRANSPARENT; TEMPERATURE; DEPOSITION; EPITAXY;

D O I：

10.1002/cite.202300007

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

The long-term stability of the optically transparent p-type semiconductor copper iodide is a current challenge. The electrical conductivity of CuI thin films depends critically on the environmental impact. Al2O3 cappings enhance the stability considerably. Systematic studies on Al2O3/CuI heterostructures in dependence of the N-2/O-2 growth pressure show the electrical conductivity of the CuI films being determined by the oxygen diffusion through Al2O3 und CuI. Oxygen seems to be a dominating acceptor in CuI. We traced the diffusion of atmospheric oxygen into CuI with O-18 isotopes.

引用

页码：1786 / 1793

页数：8

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