Realization in circuits of a Chern state with an arbitrary Chern number

被引:10
|
作者
Wang, Zhu [1 ,2 ]
Biao, Yuanchuan [1 ,2 ]
Zeng, Xu-Tao [3 ]
Chen, Xiaoting [1 ,2 ]
Sheng, Xian-Lei [3 ,4 ]
Yang, Shengyuan A. [5 ]
Yu, Rui [1 ,2 ]
机构
[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[2] Wuhan Inst Quantum Technol, Wuhan 430206, Peoples R China
[3] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
[4] Beihang Univ, Peng Huanwu Collaborat Ctr Res & Educ, Beijing 100191, Peoples R China
[5] Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore
基金
中国国家自然科学基金;
关键词
TOPOLOGICAL INSULATOR;
D O I
10.1103/PhysRevB.107.L201101
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Chern insulator, as the most prominent topological state of matter, is characterized by the Chern number C, which in principle can take any integer values. So far, most realizations of the Chern insulator are limited to |C| = 1, and achieving higher Chern numbers remains challenging. Here, we propose a general scheme to realize the Chern state with arbitrarily large Chern number in an electric circuit. Our proposal is based on the possibility of precise control on long-range couplings, which is a unique advantage of circuit systems. Besides simulations, we present an experimental demonstration of a C = 3 state fabricated on a printed circuit board and directly image its topological chiral edge modes via AC sweep analysis. Our work opens a horizon for exploring exotic topological states of matter in classical systems.
引用
收藏
页数:6
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