Wave propagation through a piezoelectric semiconductor infinite space

被引:3
作者
Cao, Tong [1 ]
Li, Li [1 ]
Liu, Yang [1 ]
Liang, Hongmei [2 ]
Wan, Lijuan [1 ]
机构
[1] Coll Sci, Qiqihar 161006, Peoples R China
[2] Army Acad Armored Forces, Dept Fundamental Courses, Beijing 100072, Peoples R China
基金
黑龙江省自然科学基金;
关键词
Piezoelectric semiconductor; Dispersion; Attenuation; Steady-state carrier concentration; Biasingelectric field; SURFACE-WAVES; PHONONIC CRYSTAL; HALF-SPACE; DISPERSION;
D O I
10.1142/S1756973723500014
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
The propagation characteristics of anti-plane waves ,i.e. the quasi-shear horizontal waves (QSH) and the carrier waves (CA) through a piezoelectric semi conductor(Piezo-SEMI) infinite space are discussed in this paper. First, the elastic, piezoelectric, dielectric, carrier mobility and diffusion constants in the considered propagation coordinate system are obtained by Bonde transformation from those in the crystal axis coordinate system. For anti-plane case, the secular equation with the mechanical, electric and the carrier concentration fields of the anti-planewaves through a Piezo-SEMI infinite space is derived. We obtain all possible wave modes, i.e. QSH waves and CA waves, that propagate in the Piezo-SEMI material by solving the secular equation. Then, the wave speeds and attenuation of QSH waves and CA waves are obtained. The steady-state carrier concentration and biasing electric field have significant effects on dispersion and attenuation of the QSH waves and the CA waves, and the sensitive areas to the wave velocity and attenuation are obtained.
引用
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页数:14
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