Understanding native defect induced photoluminescence in Zn2SnO4

被引:4
作者
Nguyen, Ngoc Linh [1 ,2 ]
Dang, Hung The [1 ,3 ]
Tran, Manh Trung [1 ]
Van Du, Nguyen [4 ]
Tu, Nguyen [4 ]
Trung, Do Quang [4 ]
Vien, Le Thi Thao [5 ]
Huy, Pham Thanh [1 ]
机构
[1] Phenikaa Univ, Fac Mat Sci & Engn, Hanoi 12116, Vietnam
[2] A&A Green Phoenix Grp JSC, PHENIKAA Res & Technol Inst PRATI, 167 Hoang Ngan,Cau Giay,Trung Hoa, Hanoi 11313, Vietnam
[3] Phenikaa Univ, Phenikaa Inst Adv Study PIAS, Hanoi 12116, Vietnam
[4] Phenikaa Univ, Fac Fundamental Sci, Hanoi 12116, Vietnam
[5] QuyNhon Univ, Nat Sci Dept, 170 Duong Vuong, Quy Nhon 590000, Binh Dinh, Vietnam
关键词
ZINC STANNATE; HYDROTHERMAL SYNTHESIS; PHASE-TRANSITIONS; ANODE MATERIALS; PERFORMANCE;
D O I
10.1103/PhysRevB.107.L060102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Simulation of photoluminescence spectroscopy from first principles provides a powerful approach for pre-dicting the experimental spectrum and understanding the origin of the luminescence of materials. We show here that the use of the hybrid-exchange correlation functional combined with first-principles molecular dynamics can simulate the defect-induced photoluminescence spectrum of zinc stannate (Zn2SnO4) in good agreement with the experiment. The calculations were carried out for 12 different point defects of Zn2SnO4, and show that the green-to-red photoluminescence emissions obtained in the experiment are mainly contributed by the oxygen vacancy defects. These defect states play the roles of deep donors and radiative recombination centers during the photoluminescence mechanism. In particular, their electronic properties are significantly affected by temperature, which is related to the strong fluctuation of the nearest-neighbor Sn atoms relative to the vacancy center.
引用
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页数:7
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