Effect of hole-transport layer thickness on the performance of organic light-emitting diodes

被引:2
|
作者
Ulla, Hidayath [1 ]
Kiran, M. Raveendra [2 ]
Ansari, Shagufi Naz [3 ]
Alam, Mir Waqas [4 ]
Girma, Wubshet Mekonnen [5 ]
Gedda, Gangaraju [6 ,7 ,8 ]
机构
[1] Presidency Univ, Dept Phys, Bangalore, India
[2] Vignans Inst Informat Technol, Dept Phys, Visakhapatnam, Andhra Pradesh, India
[3] Presidency Univ, Dept Chem, Bangalore, India
[4] King Faisal Univ, Coll Sci, Phys Dept, Al Hasa 31982, Saudi Arabia
[5] Wollo Univ, Coll Nat Sci, Dept Chem, Dessie, Ethiopia
[6] NITTE, KS Hegde Med Acad, Cent Res Lab, Mangalore, India
[7] Chung Ang Univ, Dept Anim Sci & Technol, Anseong, Gyeonggi Do, South Korea
[8] Chung Ang Univ, BET Res Inst, Anseong, Gyeonggi Do, South Korea
关键词
OLED; alpha-NPD; Hole -transport layer; Optimal thickness; Device performance; IMPEDANCE SPECTROSCOPY; INJECTION; 1,8-NAPHTHALIMIDES; F(4)TCNQ; BLOCKING;
D O I
10.1016/j.optmat.2023.114602
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we investigated the influence of hole-transport layer thickness (0, 5, 10, 15, 20, 25, 30, 35 and 40 nm), N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine (alpha-NPD) on the performance of thermally evaporated multilayer organic light-emitting diodes (OLEDs) with tris(8-hydroxy-quinolinato)aluminium (Alq(3)) as electroluminescent material. A device with 5 nm alpha-NPD thickness showed a current density similar to 30 times higher than without any alpha-NPD layer. However, the current density decreased as the alpha-NPD thickness increased beyond 5 nm. In contrast to the current density, the device efficiency improved as alpha-NPD layer thickness increased to 30 nm, after which a drop in efficiency was observed. The current efficiency of the device with 30 nm alpha-NPD thickness was 10 times higher than the device with 5 nm alpha-NPD thickness. The results indicated that hole-injection in OLEDs was more efficient with thin 5 nm alpha-NPD, while optimal efficiency was at 30 nm of alpha-NPD thickness.
引用
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页数:6
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