Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics

被引:0
|
作者
Liu, Lixin [1 ]
Liu, Kailang [1 ]
Zhai, Tianyou [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
[2] Opt Valley Lab, Hubei 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
two-dimensional electronics; inorganic molecular crystal; dielectrics; vdW interface; BORON-NITRIDE; BORDER TRAPS; INTERFACE; TRANSISTORS; INSULATOR; DEVICES;
D O I
10.1021/acsnano.3c10137
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.
引用
收藏
页码:6733 / 6739
页数:7
相关论文
共 50 条
  • [31] Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems
    Park, Woojin
    Jang, Hye Yeon
    Nam, Jae Hyeon
    Kwon, Jung-Dae
    Cho, Byungjin
    Kim, Yonghun
    NANOMATERIALS, 2020, 10 (01)
  • [32] 2D Semiconductor Transistors with Van der Waals Oxide MoO3as Integrated High-κ Gate Dielectric
    Holler, Brian A.
    Crowley, Kyle
    Berger, Marie-Helene
    Gao, Xuan P. A.
    ADVANCED ELECTRONIC MATERIALS, 2020, 6 (10)
  • [33] Comparative analysis of two models for phonon polaritons in van der Waals materials: 2D and 3D
    Chen, Shuo
    Wu, Xiaohu
    Fu, Ceji
    NANOSCALE, 2023, 15 (44) : 17889 - 17898
  • [34] Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
    Miao, Jinshui
    Liu, Xiwen
    Jo, Kiyoung
    He, Kang
    Saxena, Ravindra
    Song, Baokun
    Zhang, Huiqin
    He, Jiale
    Han, Myung-Geun
    Hu, Weida
    Jariwala, Deep
    NANO LETTERS, 2020, 20 (04) : 2907 - 2915
  • [35] Damage-Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO3 and LiF
    Cho, Yongjae
    Lee, Sol
    Cho, Hyunmin
    Kang, Donghee
    Yi, Yeonjin
    Kim, Kwanpyo
    Park, Ji Hoon
    Im, Seongil
    SMALL METHODS, 2022, 6 (03):
  • [36] Ultrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy
    Zhou, Xing
    Hu, Xiaozong
    Zhou, Shasha
    Zhang, Qi
    Li, Huiqiao
    Zhai, Tianyou
    ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (47)
  • [37] Van der Waals Multi-Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials
    Aftab, Sikandar
    Samiya
    Ul Haq, Hafiz Mansoor
    Yousuf, Saqlain
    Khan, Muhammad Usman
    Ahmed, Zaheer
    Aziz, Jamal
    Iqbal, Muhammad Waqas
    Ur Rehman, Atteq
    Iqbal, Muhammad Zahir
    ADVANCED MATERIALS INTERFACES, 2020, 7 (24):
  • [38] Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications
    Yu, Jiadong
    Wang, Lai
    Hao, Zhibiao
    Luo, Yi
    Sun, Changzheng
    Wang, Jian
    Han, Yanjun
    Xiong, Bing
    Li, Hongtao
    ADVANCED MATERIALS, 2020, 32 (15)
  • [39] Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook
    Yang, Sijie
    Liu, Kailang
    Xu, Yongshan
    Liu, Lixin
    Li, Huiqiao
    Zhai, Tianyou
    ADVANCED MATERIALS, 2023, 35 (18)
  • [40] Controlling Injection Barriers for Ambipolar 2D Semiconductors via Quasi-van der Waals Contacts
    Wang, Junjun
    Wang, Feng
    Wang, Zhenxing
    Cheng, Ruiqing
    Yin, Lei
    Wen, Yao
    Zhang, Yu
    Li, Ningning
    Zhan, Xueying
    Xiao, Xiangheng
    Feng, Liping
    He, Jun
    ADVANCED SCIENCE, 2019, 6 (11)