A Novel Multiscale Residual Aggregation Network-Based Image Super-Resolution Algorithm for Semiconductor Defect Inspection

被引:2
作者
Liu, Yang [1 ]
Hu, Lilei [1 ,2 ]
Sun, Bin [3 ]
Ma, Can [1 ]
Shen, Jingxuan [1 ]
Chen, Chang [1 ,4 ,5 ]
机构
[1] Shanghai Univ, Sch Microelect, Shanghai 200444, Peoples R China
[2] Shanghai Ind Technol Res Inst, Res & Dev R&D Dept, Shanghai 221300, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Inst Adv Mat, Sch Mat Sci & Engn, State Key Lab Organ Elect & Informat Displays, Nanjing 210023, Peoples R China
[4] Shanghai Ind Technol Res Inst, Shanghai 221300, Peoples R China
[5] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200031, Peoples R China
基金
中国国家自然科学基金;
关键词
Inspection; Feature extraction; Convolution; Superresolution; Image reconstruction; Scanning electron microscopy; Residual neural networks; Image super-resolution; semiconductor defect inspection and testing; convolutional networks; residual networks; global residual aggregation;
D O I
10.1109/TSM.2023.3327767
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single-image super-resolution (SISR) techniques have found wide applications in semiconductor defect inspection. Enhancing image resolution to improve inspection sensitivity and accuracy holds great significance. A novel SISR algorithm, called cross-convolutional residual network (CCRN), is proposed in this study. CCRN comprises a cross-convolutional module (CCM), which incorporates a cross-sharing mechanism that facilitates the fusion of features from different stages, enabling the extraction of more information from the image. Moreover, a global residual aggregation structure (GRA) is introduced. GRA captures and transfers different levels of residual features acquired from learning each CCM to the reconstruction layer. Experimental results demonstrate that the proposed SR algorithm outperforms existing state-of-the-art SR algorithms in terms of both visual and quantitative metrics when applied to optical, SEM, and TEM images of microfluidic chips, CMOS image sensors, and quantum dots, respectively. Additionally, CCRN significantly improves the accuracy of defect classification and inspection of unpatterned wafers, as evaluated using the WM-811K dataset. Notably, an increase in local defection testing accuracy from 79.00% to 89.00% and an improvement in classification accuracy from 93.69% to 96.06% are achieved. These findings underscore the potential applications of the proposed algorithm in improving semiconductor defect inspection and classification accuracies.
引用
收藏
页码:93 / 102
页数:10
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