Ferroelectric-like Behaviors of Mobile-Ionic Field-Effect Transistors with Amorphous Dielectrics

被引：3

作者：

Liu, Huan ^{[1
]}

Jin, Chengji ^{[1
]}

Chen, Jiajia ^{[1
]}

Yu, Xiao ^{[1
]}

Li, Jing ^{[2
]}

Peng, Yue ^{[2
]}

Cheng, Ran ^{[3
]}

Chen, Bing ^{[3
]}

Liu, Yan ^{[2
]}

Hao, Yue ^{[2
]}

Han, Genquan ^{[2
]}

机构：

[1] Zhejiang Lab, Res Ctr Intelligent Chips & Devices, Hangzhou, Peoples R China

[2] Xidian Univ, Sch Microelect, Xian, Peoples R China

[3] Zhejiang Univ, Sch Micronano Elect, Hangzhou, Peoples R China

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

基金：

中国国家自然科学基金;

关键词：

Mobile ion; Ferroelectric-like; and FET;

D O I：

10.1109/EDTM55494.2023.10102947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Unique ferroelectric-like characteristics in amorphous(a-) ZrO2-based devices enabled by mobile ions are systematically investigated. The polarization switching of the metal/a-ZrO2/metal capacitor originating from the migration of ions exhibits strong frequency dependency due to the limited velocity of the mobile ions, which is proved by the comparison between experimental results and theoretical analysis. The hysteresis of drain current versus gate voltage (VG) curves of the mobile-ionic field-effect transistor (MIFET) is influenced by the VG sweeping time consistent with the frequencydependent polarization.

引用

页数：3

共 7 条

[1] Ferroelectric-Like Behavior in TaN/High-k/Si System Based on Amorphous Oxide [J].

Feng, Ze ;

Peng, Yue ;

Shen, Yang ;

Li, Zhiyun ;

Wang, Hu ;

Chen, Xiao ;

Wang, Yitong ;

Jing, Meiyi ;

Lu, Feng ;

Wang, Weihua ;

Cheng, Yahui ;

Cui, Yi ;

Dingsun, An ;

Han, Genquan ;

Liu, Hui ;

Dong, Hong .

ADVANCED ELECTRONIC MATERIALS, 2021, 7 (10)

[2]

Jerry M, 2017, INT EL DEVICES MEET

[3] Analog Synapses Based on Nonvolatile FETs with Amorphous ZrO2 Dielectric for Spiking Neural Network Applications [J].

Liu, Huan ;

Li, Jing ;

Wang, Guosheng ;

Chen, Jiajia ;

Yu, Xiao ;

Liu, Yan ;

Jin, Chengji ;

Wang, Shulong ;

Hao, Yue ;

Han, Genquan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (03) :1028-1033

[4] Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor [J].

Peng, Yue ;

Xiao, Wenwu ;

Han, Genquan ;

Liu, Yan ;

Liu, Fenning ;

Liu, Chen ;

Zhou, Yichun ;

Yang, Nan ;

Zhong, Ni ;

Duan, Chungang ;

Hao, Yue .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (09) :1340-1343

[5]

Ryu S, 2009, P IEEE INT EL DEV M, P1

[6]

Yin G., 2021, IEEE T CIRCUITS SYST, V68, P7

[7] Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories [J].

Yurchuk, Ekaterina ;

Mueller, Johannes ;

Mueller, Stefan ;

Paul, Jan ;

Pesic, Milan ;

van Bentum, Ralf ;

Schroeder, Uwe ;

Mikolajick, Thomas .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) :3501-3507

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