Valley piezoelectricity promoted by spin-orbit coupling in quantum materials

被引:5
|
作者
Rouzhahong, Yilimiranmu [1 ]
Liang, Chao [1 ]
Li, Chong [1 ]
Wang, Biao [1 ]
Li, Huashan [1 ,2 ,3 ]
机构
[1] Sun Yat sen Univ, Sch Phys, Guangzhou 510275, Peoples R China
[2] Sun Yat sen Univ, Sch Phys, Guangdong Prov Key Lab Magnetoelectr Phys & Device, Guangzhou 510275, Peoples R China
[3] Sun Yat sen Univ, Ctr Neutron Sci & Technol, Sch Phys, Guangzhou 510275, Peoples R China
基金
中国国家自然科学基金;
关键词
piezoelectricity; valley; modern polarization theory; Berry curvature; GRAPHENE; MOS2;
D O I
10.1007/s11433-022-2025-0
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Quantum materials have exhibited attractive electro-mechanical responses, but their piezoelectric coefficients are far from satisfactory due to the lack of feasible strategies to benefit from the quantum effects. We discovered the valley piezoelectric mechanism that is absent in the traditional piezoelectric theories yet promising to overcome this challenge. A theoretical model was developed to elucidate the valley piezoelectricity in 2D materials as originating from the strong spin-orbit coupling. Consistent analytical and density-functional-theory calculations validate the model and unveil the crucial dependence of valley piezoelectricity on valley/spin splitting and hybridization energy. Up to 50% of electro-mechanical responses in our tested two-dimensional systems are attributed to the valley piezoelectric mechanisms. Rational strategies including doping, passivation, and external strain are proposed to optimize piezoelectricity, with a more than 127% increase in piezoelectricity demonstrated by density-functional-theory simulations. The general valley piezoelectric model not only opens an opportunity to achieve outstanding piezoelectricity via optimizing intrinsic variables but also makes the large family of valley materials promising for piezoelectric sensing and energy harvesting.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Valley detection using a graphene gradual pn junction with spin-orbit coupling: An analytical conductance calculation
    Yang, Mou
    Wang, Rui-Qiang
    Bai, Yan-Kui
    PHYSICS LETTERS A, 2015, 379 (30-31) : 1732 - 1736
  • [22] Van Der Waals Heterostructures with Spin-Orbit Coupling
    Rossi, Enrico
    Triola, Christopher
    ANNALEN DER PHYSIK, 2020, 532 (02)
  • [23] Spin remagnetization excitations in semiconductors with Rashba and Dresselhaus spin-orbit coupling
    Kleinert, P.
    SOLID STATE COMMUNICATIONS, 2009, 149 (45-46) : 2024 - 2026
  • [24] Gate tunable spin transport in graphene with Rashba spin-orbit coupling
    Tan, Xiao-Dong
    Liao, Xiao-Ping
    Sun, Litao
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 98 : 473 - 491
  • [25] Probing Proximity-Tailored High Spin-Orbit Coupling in 2D Materials
    Sahoo, Krishna Rani
    Chakravarthy, T. Pradeep
    Sharma, Rahul
    Bawari, Sumit
    Mundlia, Suman
    Sasmal, Satyaki
    Raman, Karthik V.
    Narayanan, Tharangattu N.
    Viswanathan, Nirmal K.
    ADVANCED QUANTUM TECHNOLOGIES, 2020, 3 (09)
  • [26] First-principles determination of spin-orbit coupling parameters in two-dimensional materials
    Zollner, Klaus
    Kurpas, Marcin
    Gmitra, Martin
    Fabian, Jaroslav
    NATURE REVIEWS PHYSICS, 2025, : 255 - 269
  • [27] Tight-binding theory of spin-orbit coupling in graphynes
    van Miert, Guido
    Juricic, Vladimir
    Smith, Cristiane Morais
    PHYSICAL REVIEW B, 2014, 90 (19):
  • [28] Spin structure factors of doped monolayer Germanene in the presence of spin-orbit coupling
    Azizi, Farshad
    Rezania, Hamed
    SCIENTIFIC REPORTS, 2021, 11 (01)
  • [29] Emergent phenomena induced by spin-orbit coupling at surfaces and interfaces
    Soumyanarayanan, Anjan
    Reyren, Nicolas
    Fert, Albert
    Panagopoulos, Christos
    NATURE, 2016, 539 (7630) : 509 - 517
  • [30] Effect of spin-orbit coupling on spin transport at graphene/transition metal interface
    Mandal, Sumit
    Akhtar, Abu Jahid
    Shaw, Bikash Kumar
    Saha, Shyamal K.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (09): : 544 - 549