Review of Carbon Nanotube Field Effect Transistor for Nanoscale Regime

被引：4

作者：

Maqbool, Mehwish ^{[1
]}

Sharma, Vijay Kumar ^{[1
]}

机构：

[1] Shri Mata Vaishno Devi Univ, Sch Elect & Commun Engn, Katra 182320, India

来源：

CURRENT NANOSCIENCE | 2024年 / 20卷 / 04期

关键词：

Nanoelectronics; CNTFET; SCE; MOSFET; TFA; carbon nanotube; MULTIPLE-VALUED LOGIC; TERNARY FULL ADDER; HIGH-PERFORMANCE; CNTFET; DESIGN; POWER; VOLTAGE; MODEL; SPEED; FET;

D O I：

10.2174/1573413719666230510101913

中图分类号：

Q81 [生物工程学（生物技术）]; Q93 [微生物学];

学科分类号：

071005 ; 0836 ; 090102 ; 100705 ;

摘要：

Background: The need for high performance, small size, low delay, low power consumption, and long battery backup of portable systems is increasing with the advancement of technology. Many features of portable systems can be improved using scaling methods. In the scaling process, reducing the size of devices causes serious difficulties, including the short channel effect (SCE) and leakage current, which degenerates the characteristics of the systems.Objectives: In this review paper, a trending carbon nanotube field effect transistor (CNTFET) technology is discussed in detail. CNTFET can replace the conventional metal oxide semiconductor field effect transistor (MOSFET) technology to overcome the SCE problems in the nanoscale regime and also meet the requirements of portable systems.Methods: The CNTFET is an extremely good nanoscale technology due to its one-dimension band structure, high transconductance, high electron mobility, superior control over channel formation, and better threshold voltage. This technology is used to construct high-performance and low-power circuits by replacing the MOSFET technology. CNTFET in comparison to MOSFET takes the carbon nanotube (CNT) as a channel region.Results: The value of threshold voltage in CNTFET changes with the diameter of CNT. The threshold voltage of the devices controls many parameters at the circuit-level design. Hence, the detailed operation and the characteristics of CNTFET devices are presented in this review paper. The existing CNTFET-based ternary full adder (TFA) circuits are also described in this review paper for the performance evaluation of different parameters.Conclusion: CNTFET technology is the possible solution for the SCE in the nanoscale regime and is capable to design efficient logic circuits. The circuits using the CNTFET technology can provide better performance and various advantages, including fast speed, small area, and low power consumption, in comparison to the MOSFET circuits. Thus, CNTFET technology is the best choice for circuit designs at the nanoscale.

引用

页码：459 / 470

页数：12

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