Expanding the Efficacy of Fingermark Enhancement Using ToF-SIMS

被引:4
作者
Charlton, Deborah [1 ,2 ]
Costa, Catia [3 ]
Hinder, Steven J. J. [4 ]
Watts, John F. F. [4 ]
Bailey, Melanie J. J. [1 ]
机构
[1] Univ Surrey, Dept Chem, Guildford GU2 7XH, England
[2] Fingerprint Dev Lab, Thames Valley Police, Kidlington OX5 2NX, England
[3] Univ Surrey, Surrey Ion Beam Ctr, Guildford GU2 7XH, England
[4] Univ Surrey, Sch Mech Engn Sci, Guildford GU2 7XH, England
来源
MOLECULES | 2023年 / 28卷 / 15期
基金
英国工程与自然科学研究理事会;
关键词
fingerprint; fingermark; secondary ion mass spectrometry; SIMS; ION MASS-SPECTROMETRY; TIME; FINGERPRINTS;
D O I
10.3390/molecules28155687
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
Time-of-flight secondary ion mass spectrometry (ToF-SIMS) has been shown to enhance fingermark recovery compared to standard processes used by police forces, but there is no data to show how generally applicable the improvement is. Additionally, ToF-SIMS can be run in either positive or negative ion mode (or both), and there is no data on which mode of operation is most effective at revealing fingerprints. This study aims to fill these gaps by using ToF-SIMS to image fingerprints deposited on two common exhibit-type surfaces (polyethylene and stainless steel) using 10 donors and ageing fingerprints in either ambient, rainwater, or underground for 1 and 5 months. In all, 120 fingerprints were imaged using ToF-SIMS, and each was run in positive and negative modes. A fingerprint expert compared the fingerprint ridge detail produced by the standard process to the ToF-SIMS images. In over 50% of the samples, ToF-SIMS was shown to improve fingerprint ridge detail visualised by the respective standard process for all surfaces tested. In over 90% of the samples, the ridge detail produced by ToF-SIMS was equivalent to standard development across all different ageing and exposure conditions. The data shows that there is a benefit to running the ToF-SIMS in both positive and negative modes, even if no ridge detail was seen in one mode.
引用
收藏
页数:12
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