Numerical Investigation on Non-radiative Recombination in InGaAs Front and Rear Hetero-Junction Solar Cell

Front hetero-junction (FHJ) and rear heterojunction (RHJ) InGaAs solar cells were grown by metal-organic vapor phase epitaxy (MOVPE). Compared with RHJ solar cell, FHJ InGaAs solar cell shows a better short circuit current density (Jsc), but a worse open circuit voltage (Voc). Based on simulation results, non-radiative recombination in FHJ and RHJ InGaAs solar cells has been compared. FHJ has a better carrier diffusion length, but greater carrier loss at the interface resulted to worse Voc. RHJ has a less carrier loss in the interface but worse carrier diffusion length resulted to worse Jsc.