Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

被引：4

作者：

Zhao, Xue ^{[1
]}

Ma, Haifei ^{[1
]}

Cai, Hongxing ^{[2
]}

Wei, Zhipeng ^{[2
]}

Bi, Ying ^{[3
]}

Tang, Xin ^{[1
]}

Qin, Tianling ^{[1
]}

机构：

[1] Beijing Inst Technol, Sch Opt & Photon, Beijing 100081, Peoples R China

[2] Changchun Univ Sci & Technol, Phys Dept, Changchun 130022, Peoples R China

[3] Beijing Inst Aerosp Syst Engn, Beijing 100076, Peoples R China

来源：

MATERIALS | 2023年 / 16卷 / 17期

基金：

中国国家自然科学基金;

关键词：

colloidal quantum dots; infrared photodetector; lead chalcogenide; mercury chalcogenide; LIGAND-EXCHANGE; SIZE CONTROL; NANOCRYSTALS; DEPOSITION; TEMPERATURE; PERFORMANCE; OLEYLAMINE;

D O I：

10.3390/ma16175790

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

引用

页数：19

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