160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

被引：0
作者：
Mustapha, Ademola Akeem [1 ]
Sanduleanu, Mihai [1 ,2 ]
机构：
[1] Khalifa Univ Sci & Technol, Engn & Comp Sci Dept 1Electr, POB 127788, Abu Dhabi, U Arab Emirates
[2] Khalifa Univ, Syst Chip Ctr, POB 127788, Abu Dhabi, U Arab Emirates
来源：
MICROMACHINES | 2023年 / 14卷 / 05期
关键词：
amplifier; cascode; common source; contactless monitoring; D-band; low-noise amplifier; power amplifier; radar; vital signs; GAIN; DESIGN; NF;
D O I：
10.3390/mi14050993
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157-166 GHz frequency band. The -3 dB gain bandwidth corresponded to 157-166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the -3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.
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页数：9
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