160 GHz D-Band Low-Noise Amplifier and Power Amplifier for Radar-Based Contactless Vital-Signs-Monitoring Systems

被引:0
作者
Mustapha, Ademola Akeem [1 ]
Sanduleanu, Mihai [1 ,2 ]
机构
[1] Khalifa Univ Sci & Technol, Engn & Comp Sci Dept 1Electr, POB 127788, Abu Dhabi, U Arab Emirates
[2] Khalifa Univ, Syst Chip Ctr, POB 127788, Abu Dhabi, U Arab Emirates
关键词
amplifier; cascode; common source; contactless monitoring; D-band; low-noise amplifier; power amplifier; radar; vital signs; GAIN; DESIGN; NF;
D O I
10.3390/mi14050993
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper presents a 160 GHz, D-band, low-noise amplifier (LNA) and a D-band power amplifier (PA) implemented in the Global Foundries 22 nm CMOS FDSOI. The two designs are used for the contactless monitoring of vital signs in the D-band. The LNA is based on multiple stages of a cascode amplifier topology with a common source topology adopted as the input and output stages. The input stage of the LNA is designed for simultaneous input and output matching, while the inter-stage-matching networks are designed for maximizing the voltage swing. The LNA achieved a maximum gain of 17 dB at 163 GHz. The input return loss was quite poor in the 157-166 GHz frequency band. The -3 dB gain bandwidth corresponded to 157-166 GHz. The measured noise figure was between 7.6 dB and 8 dB within the -3 dB gain bandwidth. The power amplifier achieved an output 1 dB compression point of 6.8 dBm at 159.75 GHz. The measured power consumptions of the LNA and the PA were 28.8 mW and 10.8 mW, respectively.
引用
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页数:9
相关论文
共 29 条
[1]   A Fully-Differential 146.6-157.4 GHz LNA Utilizing Back Gate Control to Adjust Gain in 22 nm FDSOI [J].
Artz, Patrick J. ;
Scholz, Philipp ;
Mausolf, Thomas ;
Gerfers, Friedel .
2022 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS 2022), 2022, :611-614
[2]  
Asada H, 2011, EUR MICROW CONF, P1115
[3]   Figures of Merit for CMOS Low-Noise Amplifiers and Estimates for Their Theoretical Limits [J].
Belostotski, Leonid ;
Klumperink, Eric A. M. .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2022, 69 (03) :734-738
[4]  
Chae Jun Lee, 2015, 2015 Asia-Pacific Microwave Conference (APMC). Proceedings, P1, DOI 10.1109/APMC.2015.7413040
[5]   A 111-149-GHz, Compact Power-combined Amplifier With 17.5-dBm Psat, 16.5% Psat, in 22-nm CMOS FD-SOI [J].
Chien, Jeff Shih-Chieh ;
Buckwalter, James F. .
ESSCIRC 2022- IEEE 48TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2022, :453-456
[6]  
Elsayed M. S., 2020, IEEE INT SYMP CIRC S, DOI DOI 10.1109/iscas45731.2020.9180851
[7]   A 28-GHz Cascode Inverse Class-D Power Amplifier Utilizing Pulse Injection in 22-nm FDSOI [J].
Elsayed, Nourhan ;
Saleh, Hani ;
Mohammad, Baker ;
Sanduleanu, Mihai .
IEEE ACCESS, 2020, 8 :97353-97360
[8]  
Engelmann A, 2022, EUR MICROW INTEGRAT, P212, DOI 10.23919/EuMIC54520.2022.9923463
[9]   Wide Field-of-View Locating and Multimodal Vital Sign Monitoring Based on X-Band CMOS-Integrated Phased-Array Radar Sensor [J].
Fang, Zhongyuan ;
Lou, Liheng ;
Tang, Kai ;
Wang, Wensong ;
Wang, Yisheng ;
Guo, Ting ;
Yang, Chuanshi ;
Zheng, Yuanjin .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (09) :4054-4065
[10]   Millimeter-Wave Low-Noise Amplifier Design in 28-nm Low-Power Digital CMOS [J].
Fritsche, David ;
Tretter, Gregor ;
Carta, Corrado ;
Ellinger, Frank .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (06) :1910-1922