III-V-on-Si DFB Laser With Co-Integrated Power Amplifier Realized Using Micro-Transfer Printing

被引：7

作者：

Zhang, Jing ^{[1
]}

Bogaert, Laurens ^{[1
]}

Haq, Bahawal ^{[1
,2
]}

Wang, Ruohui ^{[3
]}

Matuskova, Bozena ^{[4
]}

Rimbock, Johanna ^{[4
]}

Ertl, Stefan ^{[4
]}

Gocalinska, Agnieszka ^{[5
]}

Pelucchi, Emanuele ^{[5
]}

Corbett, Brian ^{[5
]}

Van Campenhout, Joris

Lepage, Guy ^{[6
]}

Verheyen, Peter ^{[6
]}

Morthier, Geert ^{[1
]}

Roelkens, Gunther ^{[1
]}

机构：

[1] Ghent Univ Imec, Dept Informat Technol, Photon Res Grp, B-9052 Ghent, Belgium

[2] GlobalFoundries, D-01109 Dresden, Germany

[3] Northwest Univ, Sch Phys, Xian 710075, Peoples R China

[4] E Thallner GmbH, EV Grp, A-4782 Sankt Florian Am Inn, Austria

[5] Univ Coll, Tyndall Natl Inst, Cork T12 R5CP, Ireland

[6] Imec, B-3001 Heverlee, Belgium

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2023年 / 35卷 / 11期

基金：

欧盟地平线“2020”; 爱尔兰科学基金会;

关键词：

III-V-on-Si integration; DFB laser; integrated power amplifier; micro-transfer printing; PHOTODIODES;

D O I：

10.1109/LPT.2023.3263279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A C-band III-V-on-Si distributed feedback (DFB) laser with co-integrated power amplifier was realized using micro-transfer printing. The DFB laser exhibits single mode operation around 1540 nm at 20 degrees C. By driving the DFB laser and co-integrated power amplifier simultaneously, up to 14 dBm waveguide-coupled output power with over 28 dB side mode suppression ratio was achieved at an overall bias current of 270 mA.

引用

页码：593 / 596

页数：4

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