BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

被引：8

作者：

Chen, Ying-Chen ^{[1
]}

Lin, Chao-Cheng ^{[2
]}

Lin, Chang-Hsien ^{[2
]}

Chang, Yao-Feng ^{[3
]}

机构：

[1] No Arizona Univ, Sch Informat Comp & Cyber Syst, Elect & Comp Engn, Flagstaff, AZ 86011 USA

[2] Taiwan Semicond Res Inst TSRI, Tainan 704017, Taiwan

[3] Intel Corp, Hillsboro, OR 97124 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 03期

关键词：

Switches; Nonvolatile memory; Memory management; Hafnium oxide; Fuses; Security; Scanning electron microscopy; Nonvolatile memory (NVM); programmable read-only memory (PROM); self-rectified memory; sneak path; DEVICES; ARRAY; RRAM;

D O I：

10.1109/TED.2023.3237508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an engineered submicrometerscale bilayer stacking in via-type one-time programmable (OTP) memory and self-rectified resistive switching memory [resistive random access memory (ReRAM)] is demonstrated. The current development has achieved that co-existing memory functionality (OTP and ReRAM) with mitigating scaling requirement (fuse voltage trending with via size scaling), low fabrication complexity [viafuse vs. gate-dielectric anti-fuse (AF)], and match with the current metal fuse technology (> 2 V). In addition, an electrode engineered has been proposed to realize low programming voltage (similar to 1.9 V) in via-fuse OTP featuring by metal-insulator-metal advanced back-end-of-line (BEOL) process with ruthenium materials. The impact of via-size, programming window, stacked structures, and integration capability has been extensively studied. Our results provide a pathfinding of high density, integration capability, low programming voltage, multifunctionality between programmable read-only memory (PROM), and resistive switching memory co-existing in future embedded applications.

引用

页码：1042 / 1047

页数：6

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