Investigation the effect of dopant Te on CdSe thin films deposited by RF magnetron sputtering method

被引：5
作者：
Kumar, Devendra [1 ]
Lal, Chiranji [2 ]
Veer, Dharm [1 ]
Singh, Deshraj [2 ]
Kumar, Pawan [1 ]
Katiyar, Ram S. [3 ]
机构：
[1] Gurukula Kangri, Dept Phys, Haridwar 249404, India
[2] MJP Rohilkhand Univ Bareilly, KGK Coll, Dept Phys, Moradabad 243006, India
[3] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
来源：
PHYSICA SCRIPTA | 2023年 / 98卷 / 05期
关键词：
dopant; Te; CdSe; thin film; sputtering; nanocomposites; optoelectronics; MOLECULAR-BEAM EPITAXY; OPTICAL BAND-GAP; GROWTH; LAYERS;
D O I：
10.1088/1402-4896/accabc
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.
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页数：8
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