Investigation the effect of dopant Te on CdSe thin films deposited by RF magnetron sputtering method

被引：5
作者：
Kumar, Devendra [1 ]
Lal, Chiranji [2 ]
Veer, Dharm [1 ]
Singh, Deshraj [2 ]
Kumar, Pawan [1 ]
Katiyar, Ram S. [3 ]
机构：
[1] Gurukula Kangri, Dept Phys, Haridwar 249404, India
[2] MJP Rohilkhand Univ Bareilly, KGK Coll, Dept Phys, Moradabad 243006, India
[3] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
来源：
PHYSICA SCRIPTA | 2023年 / 98卷 / 05期
关键词：
dopant; Te; CdSe; thin film; sputtering; nanocomposites; optoelectronics; MOLECULAR-BEAM EPITAXY; OPTICAL BAND-GAP; GROWTH; LAYERS;
D O I：
10.1088/1402-4896/accabc
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
CdSe and CdSe:Te thin films were grown on glass substrates by RF magnetron sputtering. The doping percentage of Tellurium (Te) in CdSe was 7% for the CdSe:Te thin film. The microscopic images of the films were found to be uniform and homogeneous in nature with a uniform grain and no cracks, and the grain size of CdSe was higher than CdSe:Te thin film. CdSe:Te thin film shows a higher absorption coefficient compared to CdSe in the visible region. The Energy band gaps were found to be 2.01 and 1.73 eV for CdSe and CdSe:Te thin films, respectively. The incorporation of Te atom into the CdSe structure has enhanced the mobility and changed the type of conductivity from n-type to p-type.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] Characterization of organic polymer thin films deposited by rf magnetron sputtering
    Oya, Toshiyuki
    Kusano, Eiji
    VACUUM, 2008, 83 (03) : 564 - 568
  • [2] Investigation of annealing effects on optical properties of Ti thin films deposited by RF magnetron sputtering
    Manouchehri, I.
    Gholami, K.
    Astinchap, B.
    Mordian, R.
    Mehrparvar, D.
    OPTIK, 2016, 127 (13): : 5383 - 5389
  • [3] Thermal conductivity of AlN thin films deposited by RF magnetron sputtering
    Park, Min-Ho
    Kim, Sang-Ho
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (01) : 6 - 10
  • [4] Preparation of transparent alumina thin films deposited by RF magnetron sputtering
    Noikaew, Busarin
    Wangmooklang, Laksana
    Niyomsoan, Saisamorn
    Larpkiattaworn, Siriporn
    JOURNAL OF METALS MATERIALS AND MINERALS, 2021, 31 (02): : 96 - 103
  • [5] Structural and optical characterization of GaAs and InGaAs thin films deposited by RF magnetron sputtering
    Bernal-Correa, R.
    Gallardo-Hernandez, S.
    Cardona-Bedoya, J.
    Pulzara-Mora, A.
    OPTIK, 2017, 145 : 608 - 616
  • [6] Oxygen Effect on Structural and Optical Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering
    Abdallah, Bassam
    Jazmati, Abdul Kader
    Refaai, Raeda
    MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2017, 20 (03): : 607 - 612
  • [7] Properties of nickel oxide thin films deposited by RF reactive magnetron sputtering
    Lu, YM
    Hwang, WS
    Yang, JS
    Chuang, HC
    THIN SOLID FILMS, 2002, 420 : 54 - 61
  • [8] Characteristics of SnO2 thin films deposited by RF magnetron sputtering
    Ryu, HW
    Park, YJ
    Noh, HS
    Park, JS
    DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 : 993 - 996
  • [9] Hydrogenated nanocrystalline silicon thin films deposited by rf-magnetron sputtering
    Lee, J
    Kim, W
    Shon, C
    Lee, J
    Lyou, LH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S808 - S812
  • [10] Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
    Chandra, G. Hema
    Perez de la Cruz, J.
    JOURNAL OF CRYSTAL GROWTH, 2012, 354 (01) : 67 - 75
12345