Enhancing perovskite solar cells: Tailoring the properties of Ti-doped MAPbBr3 for reduced recombination and improved efficiency

被引:11
作者
Khan, M. I. [1 ]
Hussain, Saddam [1 ]
Saleem, Muhamad [2 ]
Alzahrani, Fatimah Mohammed [3 ]
Siddique, Muhammad [1 ]
Hassan, M. S. [1 ]
Khalid, Allah Ditta [5 ]
Iqbal, Munawar [4 ]
机构
[1] Univ Lahore, Dept Phys, Lahore 53700, Pakistan
[2] Islamia Univ Bahawalpur, Inst Phys, Bahawalpur 63100, Pakistan
[3] Princess Nourah bint Abdulrahman Univ, Coll Sci, Dept Chem, POB 84427, Riyadh 11671, Saudi Arabia
[4] Univ Educ, Dept Chem, Div Sci & Technol, Lahore, Pakistan
[5] Super Univ, Dept Phys, Lahore, Pakistan
关键词
Current density; Band gap edges; MAPbBr3; Ti; Doping; Impedance spectroscopy; LEAD-HALIDE PEROVSKITE; OPEN-CIRCUIT VOLTAGE; THIN-FILMS; CRYSTALLIZATION; TEMPERATURE; CH3NH3PBBR3; PHASE;
D O I
10.1016/j.physb.2023.415575
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
By using the sol-gel method, (0 %, 4 % and 6 %) Ti-doped MAPbBr3 films were deposited on FTO-glass substrates. XRD confirmed cubic structure of all films and the 4 % Ti-doped film has a large grain size of 80 nm. UV-Vis spectroscopy analysis confirmed that the 4 % Ti-doped film has low band gap energy of 2.36 eV, and a high refractive index of 2.62. The tuning of the conduction and valence band edges speeds up the movement of charges between the layers. The solar cells of these films have been fabricated with the geometry of glass/TiO2/ Ti-MAPbBr3/spiro-OMeTAD/Au. The 4 % Ti-MAPbBr3 based cell showed high current density (9.15 mA/cm2), open circuit voltage (1.03 V), fill factor (0.7407), and efficiency (6.9804 %). EIS showed that the 4 % TiMAPbBr3 cell has an increased electron transfer rate and lowers the possibility of recombination at the TiO2/ perovskite interface.
引用
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页数:7
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