Recent Progress in the Development of High-Density TSV for 3-Layers CMOS Image Sensors

被引：6

作者：

Borel, Stephan ^{[1
]}

Assous, Myriam ^{[1
]}

Moreau, Stephane ^{[1
]}

Velard, Remi ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA Leti, Grenoble, France

来源：

2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC | 2023年

关键词：

3D integration; fine pitch; TSV; INTEGRATION;

D O I：

10.1109/ECTC51909.2023.00198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper TSV in a via last approach were developed for advanced imaging applications. An aspect ratio of 10:1 was targeted with a diameter/space of 1 mu m/1 mu m (pitch 2 mu m) associated to a depth of 10 mu m. A test vehicle made of a single metal level on each side of a thinned Si substrate bonded onto a thick carrier was used to develop and optimize a process flow compatible with the constraints of a subsequent hybrid bonding process. An electrical resistance of 0.7 O (median value) was measured on Kelvin patterns and a yield of 100% was obtained on daisy chains made of 10 000 TSV. No failure was observed after 2000 h of HTS at 150 degrees C nor after 2000 cycles of TCT between -55 degrees C and +150 degrees C.

引用

页码：1156 / 1163

页数：8

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