Two-dimensional AlN/g-CNs van der Waals type-II heterojunction for water splitting

A type-II van der Waals heterojunction photocatalyst is not only an ideal material for hydrogen production by water splitting, but also an important way to improve efficiency and produce low-cost clean energy. In this work, we unexpectedly found that monolayers of AlN and C2N, g-C3N4, and C6N8 all formed type-II heterojunctions according to density functional theory, and we report a comparison of their photocatalytic performance. Among them, the AlN/C2N heterojunction has an appropriate band gap value of 1.61 eV for visible light water splitting. It has higher carrier mobility than the AlN/g-C3N4 heterojunction (electron 253.1 cm(2) V-1 s(-1) > 31.6 cm(2) V-1 s(-1) and hole 11043.4 cm(2) V-1 s(-1) > 524.7 cm(2) V-1 s(-1)), and an absorption peak similar those of monolayer C2N in visible light (8 x 10(4) cm(-1)) and monolayer AlN in ultraviolet light (11 x 10(4) cm(-1)). The Bader charge shows that the charge transfer number of the AlN/g-C3N4 heterojunction is higher than that of the AlN/C2N heterojunction, and its Gibbs free energy (-0.22 eV) is smaller than that of single-layer g-C3N4 (-0.30 eV). The AlN/C6N8 heterojunction also has a perfect band gap of 2.16 eV and an absorption peak of over 10 x 10(4) cm(-1) in the UV region. Since a type-II heterojunction can effectively promote the separation of photogenerated electron-hole pairs and prevent their rapid recombination, the above heterojunctions are promising candidates for new photocatalysts.