Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells

被引：0

作者：

Kim, Ki Hyun ^{[1
]}

Chung, Sung Jin ^{[2
]}

Yang, Tae Youl ^{[2
]}

Lim, Jong Chul ^{[1
]}

Chang, Hyo Sik ^{[1
]}

机构：

[1] Chungnam Natl Univ, Grad Sch Energy Sci & Technol, Daejeon, South Korea

[2] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon, South Korea

来源：

KOREAN JOURNAL OF MATERIALS RESEARCH | 2023年 / 33卷 / 11期

关键词：

atomic layer deposition; perovskite; solar cell; SnO2; electron transport layer; EFFICIENT; SNO2;

D O I：

10.3740/MRSK.2023.33.11.475

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 degrees C. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

引用

页码：475 / 481

页数：7

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