A Tunable D-Band Filter Based on MOSCAP in 65nm CMOS Technology

被引：4
作者：
Bahrami, Sirous [1 ]
Lee, Kangseop [1 ]
Song, Ho-Jin [1 ]
机构：
[1] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 37673, South Korea
来源：
IEEE ACCESS | 2023年 / 11卷
关键词：
CMOS technology; mmwave technology; MOSCAP; TFMS; tunable bandpass filter; SWITCHABLE BANDPASS; 60; GHZ; COMPACT; RESONATOR; DESIGN;
D O I：
10.1109/ACCESS.2023.3257350
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, a D-band varactor-based tunable bandpass filter is proposed in 65nm CMOS Technology. The filter is composed of coupled lines loaded with a pair of MOSCAPs that control the passband of the filter. The effects of MOSCAP parameters in terms of the quality factor and the tuning range are studied. The proper placement of the MOSCAP along the resonator is the key parameter to keep insertion loss as low as possible while the tuning range remains intact. A cross-coupled line between input/output ports introduces a pair of transmission zeros and significantly reduces the size of the filter. The tuning range of the proposed structure is 10 % (136 similar to 150 GHz). For this frequency band, the fractional bandwidth (FBW) varies between 10.9 and 11.8 % and the in-band insertion loss is between 4 and 8.2 dB. The overall size of the filter is 0.11 lambda(0) x 0.095 lambda(0). Measurements for the filter show good agreement with the simulation results.
引用
收藏
页码：26785 / 26792
页数：8
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