Dual-Gas Sensor Based on the Pt NPs/AlGaN/GaN High Electron Mobility Transistor for H and NH Gases Detection<sub/><sub/>

被引:1
作者
Su, Huan [1 ,2 ]
Wang, Yunkai [1 ,2 ]
Xu, Fang [3 ]
Dai, Longhui [1 ,2 ]
Fan, Ping [1 ,2 ]
Luo, Jingting [1 ,2 ]
Zhong, Aihua [1 ,2 ]
机构
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China
[3] Shenzhen Technol Univ, Coll Engn Phys, Key Lab Ultraintense Laser & Adv Mat Technol, Shenzhen 518118, Peoples R China
基金
中国国家自然科学基金;
关键词
Sensors; Gas detectors; HEMTs; Logic gates; Temperature sensors; Wide band gap semiconductors; Metals; Ammonia gas sensor; dual-gas detection; fast response speed; high electron mobility transistor (HEMT); AMMONIA SENSOR; RANGE;
D O I
10.1109/JSEN.2023.3332036
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multisensitive gas sensors have been drawingincreasing attention in recent years. In this work, dual-gas detection of hydrogen (H-2) and ammonia (NH3) isdemonstrated based on the Pt NPs/AlGaN/GaN high elec-tron mobility transistor (HEMT) device by solely tuning theoperating temperature. Scanning electron microscopy (SEM)and atomic force microscope (AFM) results show that the3 nm-thick Pt layer is a porous film with roughness of 1.2 nm.According to the I-d-V-g curves, the device has a pronounced pinch-off characteristic with an on-to-off ratio of five ordersof magnitude. Interestingly, this device is a H(2)gas sensorbelow 150(degrees)C and it changes to NH(3)gas sensor above 180 degrees C.Our sensor has a high response of 280.4% at 200 ppm NH(3)gas and an ultrafast response time of 4 s at 220(degrees)C. Experimentally, the device has a clear response of 1.9% at 100 ppb,indicating very low limit of detection (LOD). The capability ofdual-gas detection makes it attractive for multigas detectionand electronic nose.
引用
收藏
页码:92 / 100
页数:9
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