THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO2

被引：11
作者：
Abdulazhanov, Sukhrob [1 ]
Quang Huy Le [1 ]
Dang Khoa Huynh [1 ]
Wang, Defu [1 ]
Lehninger, David [1 ]
Kaempfe, Thomas [1 ]
Gerlach, Gerald [2 ]
机构：
[1] Fraunhofer IPMS, Ctr Nanoelect Technol, D-01109 Dresden, Germany
[2] Tech Univ Dresden, Inst Solid State Elect, D-01067 Dresden, Germany
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2023年 / 5卷 / 01期
基金：
欧盟地平线“2020”;
关键词：
BEoL; varactor; ferroelectric; HZO; tunability; loss tangent; de-embedding; VNA; OXIDE;
D O I：
10.1021/acsaelm.2c01273
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) metal-ferroelectric-metal (MFM) thin film varactor from 1 kHz up to 0.11 THz. The varactor is integrated into the back-end-of-line (BEoL) of 180 nm CMOS technology as a shunting capacitor for the coplanar waveguide (CPW) transmission line. At low frequencies, the varactor shows a slight imprint behavior, with a maximum tunability of 15% after the wake-up. In the radio-and mmWave frequency range, the varactor's maximum tunability decreases slightly from 13% at 30 MHz to 10% at 110 GHz. Ferroelectric varactors were known for their frequency-independent, linear tunability as well as low loss. However, this potential was never fully realized due to limitations in integration. Here, we show that ferroelectric HfO2 thin films with good back-end-of-line compatibility support very large scale integration. This opens up a broad range of possible applications in the mmWave and THz frequency range such as 6G communications, imaging radar, or THz imaging.
引用
收藏
页码：189 / 195
页数：7
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