Thermal-Electrical Modeling and Co-Optimization of a Half-Bridge Power Module With Silver- Sintered Molybdenum Packaging

被引:1
作者
Yang, Yuhang [1 ]
Zhou, Linke [1 ]
Zayed, Omar [2 ]
Alizadeh, Maryam [1 ]
Stevanovic, Doris [3 ]
Narimani, Mehdi [2 ]
Emadi, Ali [2 ]
机构
[1] McMaster Univ, Dept Mech Engn, Hamilton, ON L8S 4L8, Canada
[2] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4L8, Canada
[3] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L8, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Modeling; optimization methods; power electronics; semiconductor device packaging; ALGORITHM; DESIGN;
D O I
10.1109/TPEL.2023.3281417
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article proposes a methodology of analytical modeling and optimization of power modules, especially compatible with modules with silver-sintered molybdenum (SSM) packaging or other insulated metal substrate types of packaging schemes. First, a decoupled Fourier-based thermal model is presented, which considers the barrier effect between substrate segments. Compared with the original Fourier-based model, it reduces the average error from 93.8% to 10.9%, when estimating the difference of junction temperatures (T-j) for power modules with asymmetric substrates. Then, a stray inductance (L-s) model is developed based on the partial inductance method and the actual current distribution, whose error is less than 12.1% when tested with example half bridge SSM modules. Next, analytical models are combined with the particle swarm optimization algorithm to design a half-bridge power module with SSM packaging. Numerical simulations prove that the analytical estimations of T-j and L-s of the optimized module are accurate, with errors of 4.6% and 8.3%, respectively. The fabrication process of the designed SSM module is then elaborated. Finally, the accuracy of L-s estimation is validated by the double pulse test, where the error is 0.4%. The junction-to-case thermal resistance is characterized by the structural function analysis, in which the error is 3.4%
引用
收藏
页码:11277 / 11289
页数:13
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