Comparative study on removal of metallurgical silicon impurities by different acid leaching methods

被引:0
|
作者
Gao, Zijie [1 ]
Luo, Dawei [1 ]
机构
[1] Chengdu Univ Technol, Chengdu, Peoples R China
来源
PHYSICOCHEMICAL PROBLEMS OF MINERAL PROCESSING | 2023年 / 59卷 / 02期
关键词
metallurgical-grade silicon; hydrometallurgy; acid leaching; impurity removal efficiency; GRADE SILICON; POLYCRYSTALLINE SILICON; PURIFICATION; EFFICIENCY; FILMS;
D O I
10.37190/ppmp/162331
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hydrometallurgy is considered a promising method to produce solar-grade silicon (SOG-Si) from metallurgical-grade silicon (MG-Si) due to its advantages of low cost, simple operation, and easy control. In this paper, the effects of particle size of MG-Si, type of acid, leaching time, temperature, and liquid-to-solid ratio on the purification efficiency were investigated in an external field environment with the addition of ultrasound. The purification efficiencies of the two acid-leaching methods were compared. It was found that the simultaneous use of HCl + HNO3 was more effective than using only HCl for impurity removal in MG-Si: the extraction efficiencies of impurities Fe and Al were increased by 2.2% and 13.4%, respectively. The impurity contents in MG-Si before and after calcination pretreatment were also compared. This paper is expected to help researchers select the appropriate hydrometallurgical technique to reduce the impurity content in MG-Si.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] Metal impurities removal from metallurgical grade silicon by hydrochloric acid leaching
    Li, Xiaoming
    Dang, Yanmei
    Li, Wenfeng
    Zhao, Junxue
    Cui, Yaru
    METALLURGY TECHNOLOGY AND MATERIALS II, 2013, 813 : 7 - 10
  • [2] Effect of acetic acid on the leaching behavior of impurities in metallurgical grade silicon
    Lu, Haifei
    Wei, Kuixian
    Ma, Wenhui
    Xie, Keqiang
    Wu, Jijun
    Lei, Yun
    Dai, Yongnian
    SEPARATION SCIENCE AND TECHNOLOGY, 2017, 52 (07) : 1257 - 1264
  • [3] Removal of impurities from metallurgical grade silicon with metal assisted chemical leaching
    Xi, Fengshuo
    Li, Shaoyuan
    Ma, Wenhui
    Ding, Zhao
    Lei, Yun
    Chen, Zhengjie
    Wei, Kuixian
    Xie, Keqiang
    Wu, Jijun
    HYDROMETALLURGY, 2018, 178 : 250 - 255
  • [4] The Effect of Calcium Oxide Addition on the Removal of Metal Impurities from Metallurgical-Grade Silicon by Acid Leaching
    Falin He
    Songsheng Zheng
    Chao Chen
    Metallurgical and Materials Transactions B, 2012, 43 : 1011 - 1018
  • [5] Effect of Thermal Pretreatment and Acid Leaching on the Removal of Boron from Metallurgical Grade Silicon
    Tian, Chunjin
    Lu, Haifei
    Wei, Kuixian
    Ma, Wenhui
    Xie, Keqiang
    Wu, Jijun
    OXIDATION OF METALS, 2019, 91 (1-2): : 213 - 224
  • [6] The Effect of Calcium Oxide Addition on the Removal of Metal Impurities from Metallurgical-Grade Silicon by Acid Leaching
    He, Falin
    Zheng, Songsheng
    Chen, Chao
    METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 2012, 43 (05): : 1011 - 1018
  • [7] THE REMOVAL OF TITANIUM FROM METALLURGICAL SILICON BY HF-HCL LEACHING
    Xie, Keqiang
    Mai, Yi
    Ma, Wenhui
    Wei, Kuixian
    Zhou, Jihong
    Zhang, Long
    METALLURGIST, 2013, 57 (7-8) : 633 - 638
  • [8] Refining of Metallurgical Grade Silicon by Acid Leaching
    Lu, Dongliang
    Hu, Yuyan
    Lin, Tao
    Liu, Yu
    Wang, Bo
    Sun, Yanhui
    Chen, Hongyu
    Li, Qianshu
    ADVANCED MANUFACTURING TECHNOLOGY, PTS 1, 2, 2011, 156-157 : 566 - 569
  • [9] Effect of Thermal Pretreatment and Acid Leaching on the Removal of Boron from Metallurgical Grade Silicon
    Chunjin Tian
    Haifei Lu
    Kuixian Wei
    Wenhui Ma
    Keqiang Xie
    Jijun Wu
    Oxidation of Metals, 2019, 91 : 213 - 224
  • [10] Leaching behaviors of impurities in metallurgical-grade silicon with hafnium addition
    Lei, Yun
    Ma, Wenhui
    Ma, Xiaodong
    Wu, Jijun
    Wei, Kuixian
    Li, Shaoyuan
    Morita, Kazuki
    HYDROMETALLURGY, 2017, 169 : 433 - 439